Datasheet > 1N4148/F2

1N4148/F2

更新时间： 2023-06-15 00:00:00

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
4页	127K
描述
Rectifier Diode, 1 Element, 0.15A, 100V V(RRM), Silicon, DO-204AH, GLASS, DO-35, 2 PIN

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1N4148/F2 数据手册

1N4148

Vishay Semiconductors

formerly General Semiconductor

Electrical Characteristics(T_J= 25°C unless otherwise noted)

Parameter

Symbol

V_(BR)R

V_F

Test Condition

Min

100

—

Typ

Max

Unit

Reverse Breakdown Voltage

Forward Voltage

I_R= 100µA

I_F= 10mA

—

1.0

V_R= 20V

V_R= 75V

V_R= 20V, T_J= 150°C

—

µA

Leakage Current

Capacitance

I_R

C_tot

V_fr

V_F= V_R= 0V

—

Voltage Rise when Switching ON

(tested with 50mA Pulses)

t_p= 0.1 s, Rise time < 30ns

—

2.5

f_p= 5 to 100kHz

I_F= 10mA, I_{R =}1mA,

Reverse Recovery Time

Rectification Efficiency

t_rr

—

V_R= 6V , R_L= 100Ω

η_ν

f = 100MHz, V_RF= 2V

0.45

—

Rectification Efficiency Measurement Circuit

www.vishay.com

Document Number 88100

07-May-02

123 4

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