5秒后页面跳转
1N4004G PDF预览

1N4004G

更新时间: 2024-11-26 22:37:55
品牌 Logo 应用领域
固锝 - GOOD-ARK 二极管
页数 文件大小 规格书
2页 174K
描述
GLASS PASSIVATED JUNCTION RECTIFIER

1N4004G 技术参数

生命周期:Active包装说明:O-PALF-W2
Reach Compliance Code:compliant风险等级:5.15
外壳连接:ISOLATED配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):1.1 VJEDEC-95代码:DO-204AL
JESD-30 代码:O-PALF-W2最大非重复峰值正向电流:30 A
元件数量:1相数:1
端子数量:2最高工作温度:150 °C
最低工作温度:-55 °C最大输出电流:1 A
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:LONG FORM最大重复峰值反向电压:400 V
最大反向电流:5 µA最大反向恢复时间:1 µs
反向测试电压:400 V子类别:Rectifier Diodes
表面贴装:NO端子形式:WIRE
端子位置:AXIALBase Number Matches:1

1N4004G 数据手册

 浏览型号1N4004G的Datasheet PDF文件第2页 
1N4001G THRU 1N4007G, BY133G  
GLASS PASSIVATED JUNCTION RECTIFIER  
Reverse Voltage -  
50 to 1300 Volts  
Forward Current -  
1.0 Ampere  
Features  
Plastic package has Underwriters Laboratory Flammability  
Classification 94V-0  
High temperature metallurgically bonded construction  
Glass passivated cavity-free junction  
Capable of meeting environmental standards of  
MIL-S-19500  
1.0 ampere operation at TA=75 with no thermal runaway  
Typical IR less than 0.1  
A
High temperature soldering guaranteed:  
350 /10 seconds, 0.375” (9.5mm) lead length,  
5 lbs. (2.3Kg) tension  
Mechanical Data  
DIMENSIONS  
Case: DO-41 molded plastic over glass body  
Terminals: Plated axial leads, solderable per  
MIL-STD-750, method 2026  
Polarity: Color band denotes cathode end  
Mounting Position: Any  
inches  
mm  
DIM  
Note  
Max.  
Min.  
Max.  
0.205  
0.106  
0.034  
-
Min.  
4.2  
A
B
C
D
0.165  
0.079  
0.028  
1.000  
5.2  
2.7  
0.86  
-
2.0  
0.71  
25.40  
Weight: 0.012 ounce, 0.335 gram  
Maximum Ratings and Electrical Characteristics  
Ratings at 25 ambient temperature unless otherwise specified.  
1N  
1N  
1N  
1N  
1N  
1N  
1N  
BY  
Symbols  
Units  
4001G 4002G 4003G 4004G 4005G 4006G 4007G 133G  
Maximum repetitive peak reverse voltage  
Maximum RMS voltage  
VRRM  
VRMS  
VDC  
50  
35  
50  
100  
70  
200  
140  
200  
400  
280  
400  
600  
420  
600  
800  
560  
800  
1000  
700  
1300  
910  
Volts  
Volts  
Volts  
Maximum DC blocking voltage  
100  
1000  
1300  
Maximum average forward rectified current  
0.375" (9.5mm) lead length at TA=75  
I(AV)  
1.0  
Amp  
Peak forward surge current  
8.3mS single half sine-wave superimposed  
on rated load (MIL-STD-750D 4066 method)  
IFSM  
30.0  
1.1  
Amps  
Maximum instantaneous forward voltage at 1.0A  
VF  
IR  
Volts  
A
Maximum DC reverse current  
at rated DC blocking voltage  
T =25  
5.0  
50.0  
TAA=125  
Typical reverse recovery time (Note 1)  
Typical junction capacitance (Note 2)  
Trr  
CJ  
2.0  
8.0  
S
F
R
R
55.0  
25.0  
JA  
Typical thermal resistance (Note 3)  
/W  
JL  
Operating junction and storage temperature range  
TJ, TSTG  
-65 to +175  
Notes:  
(1) Reverse recovery test conditions: IF=0.5A, IR=1.0A, Irr=0.25A  
(2) Measured at 1.0MHz and applied reverse voltage of 4.0 volts  
(3) Thermal resistance from junction to ambient at 0.375” (9.5mm) lead length, P.C.B. mounted  
1

1N4004G 替代型号

型号 品牌 替代类型 描述 数据表
1N4004RLG ONSEMI

功能相似

Axial Lead Standard Recovery Rectifiers
1N4004G ONSEMI

功能相似

Axial Lead Standard Recovery Rectifiers
1N4004-T DIODES

功能相似

1.0A RECTIFIER

与1N4004G相关器件

型号 品牌 获取价格 描述 数据表
1N4004-G COMCHIP

获取价格

General Purpose Rectifier
1N4004G-13 DIODES

获取价格

Rectifier Diode, 1 Element, 1A, 400V V(RRM), Silicon, DO-41, PLASTIC PACKAGE-2
1N4004G-A GOOD-ARK

获取价格

1.0A GLASS PASSIVATED RECTIFIER
1N4004G-B GOOD-ARK

获取价格

1.0A GLASS PASSIVATED RECTIFIER
1N4004GH01 RECTRON

获取价格

Rectifier Diode, 1 Element, 1A, 400V V(RRM), Silicon, DO-41,
1N4004GH02 RECTRON

获取价格

Rectifier Diode, 1 Element, 1A, 400V V(RRM), Silicon, DO-41,
1N4004GH02-1 RECTRON

获取价格

Rectifier Diode, 1 Element, 1A, 400V V(RRM), Silicon, DO-41,
1N4004GH02-2 RECTRON

获取价格

Rectifier Diode, 1 Element, 1A, 400V V(RRM), Silicon, DO-41,
1N4004GH03-1 RECTRON

获取价格

Rectifier Diode, 1 Element, 1A, 400V V(RRM), Silicon, DO-41,
1N4004GH03-2 RECTRON

获取价格

Rectifier Diode, 1 Element, 1A, 400V V(RRM), Silicon, DO-41,