5秒后页面跳转
1N4003SG PDF预览

1N4003SG

更新时间: 2024-11-24 06:26:15
品牌 Logo 应用领域
虹扬 - HY 整流二极管
页数 文件大小 规格书
2页 89K
描述
GLASS PASSIVATED RECTIFIERS

1N4003SG 技术参数

生命周期:Contact Manufacturer包装说明:O-PALF-W2
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.58Is Samacsys:N
外壳连接:ISOLATED配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
JESD-30 代码:O-PALF-W2元件数量:1
端子数量:2最高工作温度:150 °C
最低工作温度:-55 °C最大输出电流:1 A
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:LONG FORM最大重复峰值反向电压:200 V
表面贴装:NO端子形式:WIRE
端子位置:AXIALBase Number Matches:1

1N4003SG 数据手册

 浏览型号1N4003SG的Datasheet PDF文件第2页 
1N4001SG thru 1N4007SG  
REVERSE VOLTAGE - 50 to 1000 Volts  
FORWARD CURRENT - 1.0 Ampere  
GLASS PASSIVATED RECTIFIERS  
A-405  
FEATURES  
Low cost  
Diffused junction  
Low forward voltage drop  
Low reverse leakage current  
.028(0.7)  
DIA.  
.020(0.5)  
1.0(25.4)  
MIN.  
High current capability  
The plastic material carries UL recognition 94V-0  
.205(5.2)  
MAX  
.107(2.7)  
DIA.  
.080(2.0)  
MECHANICAL DATA  
Case: JEDEC A-405 molded plastic  
Polarity: Color band denotes cathode  
Weight: 0.008 ounces , 0.22 grams  
Mounting position :Any  
1.0(25.4)  
MIN.  
Dimensions in inches and (millimeters)  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Rating at 25ambient temperature unless otherwise specified.  
Single phase, half wave ,60Hz, resistive or inductive load.  
For capacitive load, derate current by 20%  
1N  
1N  
1N  
1N  
1N  
1N  
1N  
SYMBOL  
UNIT  
CHARACTERISTICS  
Maximum Recurrent Peak Reverse Voltage  
Maximum RMS Voltage  
4001SG 4002SG 4003SG 4004SG 4005SG 4006SG 4007SG  
VRRM  
VRMS  
VDC  
50  
35  
50  
100  
70  
200  
140  
200  
400  
280  
400  
600  
420  
600  
800  
560  
800  
1000  
700  
V
V
V
Maximum DC Blocking Voltage  
Maximum Average Forward  
100  
1000  
I(AV)  
1.0  
A
Rectified Current  
@TA=75 ℃  
Peak Forward Surge Current  
8.3ms Single Half Sine-Wave  
Super Imposed On Rated Load (JEDEC Method)  
IFSM  
30  
A
1.1  
Maximum Forward Voltage at 1.0A DC  
VF  
IR  
V
5.0  
50  
Maximum DC Reverse Current  
at Rated DC Blocking Voltage  
@TJ=25℃  
μA  
@TJ=125℃  
15  
Typical Junction Capacitance (Note1)  
Typical Thermal Resistance (Note2)  
Operating Temperature Range  
Storage Temperature Range  
CJ  
RθJC  
TJ  
pF  
/W  
50  
-55 to +150  
-55 to +150  
TSTG  
NOTES:1.Measured at 1.0 MHz and applied reverse voltage of 4.0V DC  
2.Thermal resistance junction to case  
~ 40 ~  

与1N4003SG相关器件

型号 品牌 获取价格 描述 数据表
1N4003S-GT3 SENSITRON

获取价格

Rectifier Diode, 1 Element, 1A, 200V V(RRM), Silicon, PLASTIC, A-405, 2 PIN
1N4003ST EIC

获取价格

SILICON RECTIFIER DIODE
1N4003S-T/R FRONTIER

获取价格

Rectifier Diode, 1 Element, 1A, Silicon,
1N4003S-T3 SENSITRON

获取价格

Rectifier Diode, 1 Element, 1A, 200V V(RRM), Silicon, PLASTIC, A-405, 2 PIN
1N4003T NJSEMI

获取价格

Diode 200V 1A 2-Pin DO-41 T/R
1N4003-T DIODES

获取价格

1.0A RECTIFIER
1N4003-T RECTRON

获取价格

Rectifier Diode, 1 Element, 1A, 200V V(RRM), Silicon, DO-41, PLASTIC PACKAGE-2
1N4003-T/R FRONTIER

获取价格

Rectifier Diode, 1 Element, 1A, Silicon,
1N4003T26R FAIRCHILD

获取价格

Rectifier Diode, 1 Element, 1A, 200V V(RRM), Silicon, DO-41,
1N4003-T3 WTE

获取价格

1.0A SILICON RECTIFIER