Datasheet > 1N4003G

1N4003G

更新时间： 2024-11-20 06:25:39

品牌	Logo	应用领域
DIOTECH		二极管
页数	文件大小	规格书
2页	784K
描述
GENERAL PURPOSE SILICON RECTIFIER

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中文翻译

获取价格

数据手册

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1N4003G 数据手册

1N4001G THRU 1N4007G

GENERAL PURPOSE SILICON RECTIFIER

Reverse Voltage - 50 to 1000 Volts

Forward Current - 1.0 Ampere

FEATURES

DO-41

●

Glass Passivated Die Construction

The plastic package carries Underwriters Laboratory

Flammability Classification 94V-0

Construction utilizes void-free

molded plastic technique

Low reverse leakage

High forward surge current capability

High temperature soldering guaranteed:

●

1.0 (25.4)

MIN.

●

0.107 (2.7)

0.080 (2.0)

DIA.

●

250 C/10 seconds,0.375

”(9.5mm) lead length,

0.205 (5.2)

0.160(4.1)

5 lbs. (2.3kg) tension

MECHANICAL DATA

1.0 (25.4)

MIN.

Case: JEDEC DO-41 molded plastic body

Terminals: Plated axial leads, solderable per MIL-STD-750,

Method 2026

0.034 (0.86)

0.028 (0.71)

DIA.

Polarity: Color band denotes cathode end

Mounting Position: Any

Dimensions in inches and (millimeters)

Weight:0.012 ounce, 0.33 grams

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25 C ambient temperature unless otherwise specified.

Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.

SYMBOLS

Characteristic

UNITS

4006G 4007G

4001G 4002G 4003G 4004G 4005G

Maximum repetitive peak reverse voltage

Maximum RMS voltage

100

200 400

140 280

200 400

600

420

600

800 1000

RRM

RMS

560

700

100

800 1000

Maximum DC blocking voltage

Maximum average forward rectified current

(AV)

1.0

0.375”(9.5mm) lead length at TA=75 C

Peak forward surge current

FSM

30.0

1.0

8.3ms single half sine-wave superimposed on

rated load (JEDEC Method)

Maximum instantaneous forward voltage at 1.0A

Maximum DC reverse current

at rated DC blocking voltage

=25 C

5.0

50.0

µA

A=100 C

Typical junction capacitance (NOTE 1)

K/W

8.0

Typical thermal resistance (NOTE 2)

Operating junction and storage temperature range

STG

100

TJ,T

-65 to +175

Note:1.Measured at 1MHz and applied reverse voltage of 4.0V D.C.

2.Thermal resistance from junction to ambient at 0.375” (9.5mm)lead length,P.C.B. mounted

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与1N4003G相关器件

型号	品牌	获取价格	描述	数据表
1N4003-G	COMCHIP	获取价格	General Purpose Rectifier
1N4003G-A	GOOD-ARK	获取价格	1.0A GLASS PASSIVATED RECTIFIER
1N4003G-B	GOOD-ARK	获取价格	1.0A GLASS PASSIVATED RECTIFIER
1N4003GH01	RECTRON	获取价格	Rectifier Diode, 1 Element, 1A, 200V V(RRM), Silicon, DO-41,
1N4003GH02	RECTRON	获取价格	Rectifier Diode, 1 Element, 1A, 200V V(RRM), Silicon, DO-41,
1N4003GH02-3	RECTRON	获取价格	Rectifier Diode, 1 Element, 1A, 200V V(RRM), Silicon, DO-41,
1N4003GH02-4	RECTRON	获取价格	Rectifier Diode, 1 Element, 1A, 200V V(RRM), Silicon, DO-41,
1N4003GH02-5	RECTRON	获取价格	Rectifier Diode, 1 Element, 1A, 200V V(RRM), Silicon, DO-41,
1N4003GH03	RECTRON	获取价格	Rectifier Diode, 1 Element, 1A, 200V V(RRM), Silicon, DO-41,
1N4003GH05-1	RECTRON	获取价格	Rectifier Diode, 1 Element, 1A, 200V V(RRM), Silicon, DO-41,