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1N3957 PDF预览

1N3957

更新时间: 2024-11-23 07:20:59
品牌 Logo 应用领域
CENTRAL 二极管
页数 文件大小 规格书
2页 107K
描述
GLASS PASSIVATED GENERAL PURPOSE SILICON RECTIFIERS 1.0 AMP, 200 THRU 1000 VOLTS

1N3957 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Active包装说明:GPR-1A, 2 PIN
针数:2Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:5.09其他特性:HIGH RELIABILITY
外壳连接:ISOLATED配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):1 VJESD-30 代码:E-XALF-W2
JESD-609代码:e0最大非重复峰值正向电流:20 A
元件数量:1端子数量:2
最高工作温度:200 °C最大输出电流:1 A
封装主体材料:UNSPECIFIED封装形状:ELLIPTICAL
封装形式:LONG FORM峰值回流温度(摄氏度):NOT SPECIFIED
认证状态:Not Qualified最大重复峰值反向电压:1000 V
最大反向恢复时间:2 µs子类别:Rectifier Diodes
表面贴装:NO端子面层:Tin/Lead (Sn/Pb)
端子形式:WIRE端子位置:AXIAL
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

1N3957 数据手册

 浏览型号1N3957的Datasheet PDF文件第2页 
TM  
1N3611 1N3613  
1N3612 1N3614  
Central  
1N3957  
Semiconductor Corp.  
GLASS PASSIVATED  
GENERAL PURPOSE  
SILICON RECTIFIERS  
1.0 AMP, 200 THRU 1000 VOLTS  
DESCRIPTION:  
The CENTRAL SEMICONDUCTOR 1N3611 thru  
1N3614, and 1N3957 are hermetically sealed,  
glass passivated, general purpose silicon rectifiers  
ideal for commercial, military, automotive and  
entertainment applications requiring high reliability  
and failure free performance.  
MARKING: FULL PART NUMBER  
GPR-1A CASE  
MAXIMUM RATINGS: (T =25°C unless otherwise noted)  
A
SYMBOL 1N3611 1N3612 1N3613 1N3614 1N3957 UNITS  
Peak Repetitive Reverse Voltage  
DC Blocking Voltage  
V
200  
200  
400  
400  
600  
600  
800  
800  
1000  
1000  
V
V
RRM  
V
R
RMS Reverse Voltage  
V
R(RMS)  
I
O
140  
280  
420  
1.0  
50  
560  
700  
V
A
A
Average Forward Current (T =100°C)  
A
Peak Forward Surge Current (tp=8.3ms)  
I
FSM  
Operating and Storage  
Junction Temperature  
T , T  
stg  
°C  
J
-65 to +175  
ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)  
A
SYMBOL  
TEST CONDITIONS  
TYP  
MAX  
5.0  
UNITS  
μA  
I
I
V =Rated V  
R
R
RRM  
RRM  
V =Rated V  
, T =150°C  
200  
1.1  
μA  
R
R
A
V
I =1.0A  
V
F
F
C
V =4.0V, f=1.0MHz  
25  
pF  
J
R
t
I =0.5A, I =1.0A, I =0.25A  
2.0  
μs  
rr  
F
R
rr  
R0 (19-November 2007)  

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