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1N3614 PDF预览

1N3614

更新时间: 2024-11-24 07:20:55
品牌 Logo 应用领域
CENTRAL 整流二极管
页数 文件大小 规格书
2页 107K
描述
GLASS PASSIVATED GENERAL PURPOSE SILICON RECTIFIERS 1.0 AMP, 200 THRU 1000 VOLTS

1N3614 技术参数

生命周期:Active包装说明:E-XALF-W2
针数:2Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:5.14Is Samacsys:N
其他特性:HIGH RELIABILITY外壳连接:ISOLATED
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):1 V
JESD-30 代码:E-XALF-W2JESD-609代码:e0
元件数量:1端子数量:2
最高工作温度:300 °C最大输出电流:1 A
封装主体材料:UNSPECIFIED封装形状:ELLIPTICAL
封装形式:LONG FORM认证状态:Not Qualified
最大重复峰值反向电压:800 V最大反向恢复时间:2 µs
子类别:Rectifier Diodes表面贴装:NO
端子面层:TIN LEAD端子形式:WIRE
端子位置:AXIALBase Number Matches:1

1N3614 数据手册

 浏览型号1N3614的Datasheet PDF文件第2页 
TM  
1N3611 1N3613  
1N3612 1N3614  
Central  
1N3957  
Semiconductor Corp.  
GLASS PASSIVATED  
GENERAL PURPOSE  
SILICON RECTIFIERS  
1.0 AMP, 200 THRU 1000 VOLTS  
DESCRIPTION:  
The CENTRAL SEMICONDUCTOR 1N3611 thru  
1N3614, and 1N3957 are hermetically sealed,  
glass passivated, general purpose silicon rectifiers  
ideal for commercial, military, automotive and  
entertainment applications requiring high reliability  
and failure free performance.  
MARKING: FULL PART NUMBER  
GPR-1A CASE  
MAXIMUM RATINGS: (T =25°C unless otherwise noted)  
A
SYMBOL 1N3611 1N3612 1N3613 1N3614 1N3957 UNITS  
Peak Repetitive Reverse Voltage  
DC Blocking Voltage  
V
200  
200  
400  
400  
600  
600  
800  
800  
1000  
1000  
V
V
RRM  
V
R
RMS Reverse Voltage  
V
R(RMS)  
I
O
140  
280  
420  
1.0  
50  
560  
700  
V
A
A
Average Forward Current (T =100°C)  
A
Peak Forward Surge Current (tp=8.3ms)  
I
FSM  
Operating and Storage  
Junction Temperature  
T , T  
stg  
°C  
J
-65 to +175  
ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)  
A
SYMBOL  
TEST CONDITIONS  
TYP  
MAX  
5.0  
UNITS  
μA  
I
I
V =Rated V  
R
R
RRM  
RRM  
V =Rated V  
, T =150°C  
200  
1.1  
μA  
R
R
A
V
I =1.0A  
V
F
F
C
V =4.0V, f=1.0MHz  
25  
pF  
J
R
t
I =0.5A, I =1.0A, I =0.25A  
2.0  
μs  
rr  
F
R
rr  
R0 (19-November 2007)  

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