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1N3327RBE3 PDF预览

1N3327RBE3

更新时间： 2024-11-16 15:36:15
品牌 Logo 应用领域
美高森美 - MICROSEMI 测试光电二极管
页数 文件大小 规格书
3页 374K
描述
Zener Diode, 39V V(Z), 5%, 50W, Silicon, Unidirectional, DO-203AB, HERMETIC SEALED, METAL GLASS, DO-5, 1 PIN

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1N3327RBE3 技术参数

生命周期：Active包装说明：O-MUPM-D1
Reach Compliance Code：compliantECCN代码：EAR99
HTS代码：8541.10.00.50风险等级：5.67
其他特性：PD-CASE外壳连接：CATHODE
配置：SINGLE二极管元件材料：SILICON
二极管类型：ZENER DIODEJEDEC-95代码：DO-203AB
JESD-30 代码：O-MUPM-D1元件数量：1
端子数量：1最高工作温度：175 °C
最低工作温度：-65 °C封装主体材料：METAL
封装形状：ROUND封装形式：POST/STUD MOUNT
极性：UNIDIRECTIONAL最大功率耗散：50 W
标称参考电压：39 V表面贴装：NO
技术：ZENER端子形式：SOLDER LUG
端子位置：UPPER最大电压容差：5%
工作测试电流：320 mABase Number Matches：1

1N3327RBE3 数据手册

 浏览型号1N3327RBE3的Datasheet PDF文件第2页浏览型号1N3327RBE3的Datasheet PDF文件第3页 
1N3305 thru 1N3350B  
and 1N4549B thru 1N4556B  
50 WATT ZENER DIODES  
S C O T T S D A L E D I V I S I O N  
DESCRIPTION  
APPEARANCE  
These high power 50 W Zener diodes represented by the JEDEC  
registered 1N3305 thru 1N3350B and 1N4549 thru 1N4556B series provide  
voltage regulation in a selection over a 3.9 V to 200 V broad range of  
voltages. They may be operated up to 50 W with adequate mounting and  
heat sinking with their low thermal resistance. These Zeners are also  
available in JAN, JANTX, JANTXV military qualifications. Microsemi also  
offers numerous other Zener products to meet higher and lower power  
applications.  
DO- 5  
(DO-203AB)  
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com  
FEATURES  
APPLICATIONS / BENEFITS  
•
JEDEC registered 1N3305 thru 1N3350B and  
•
•
Regulates voltage over a broad operating  
current and temperature range  
Standard voltage tolerances are +/- 5% with B  
suffix, +/-10% with an A suffix, and +/-20% with no  
suffix  
1N4549 thru 1N4556B  
•
•
•
•
Internal solder bond construction  
Hermetically sealed (welded)  
Zener Voltage 3.9V to 200V.  
Also available in JAN, JANTX, and JANTXV  
qualifications per MIL-PRF-19500/358 by adding  
the JAN, JANTX, or JANTXV prefixes to part  
numbers for desired level of screening; (e.g.  
JANTX1N3305B, JANTXV1N3318B, etc.  
•
Consult factory for +/-2% or +/-1% with a C or D  
suffix respectively  
•
•
Reverse polarity available  
Nonsensitive to ESD per MIL-STD-750 Method  
1020  
•
•
Standard polarity is anode to case  
•
Inherently radiation hard as described in  
Microsemi MicroNote 050  
Reverse polarity with cathode to case by  
designating R suffix in part number, e.g.  
1N3305RB, etc.  
•
Consult factory for surface mount equivalents  
MAXIMUM RATINGS  
MECHANICAL AND PACKAGING  
•
•
•
•
•
Junction & Storage Temperatures: -65oC to +175oC  
DC Power Dissipation: 50 watts at TC < 75 oC  
Power Derating: 0.5 W/oC above 75oC  
•
CASE: Industry Standard DO-5 (DO-203AB),  
11/16 inch hexagonal stud with 1/4-28 threads  
welded hermetically sealed metal and glass  
•
•
FINISH: All external surfaces are corrosion  
Forward Voltage @ 10 A: 1.5 Volts  
resistant and terminal solderable.  
THERMAL RESISTANCE: 2.0 oC/W maximum  
junction to hexagonal base (1.5 oC/W typical)  
POLARITY: Standard Polarity units are connected  
anode to case. Reverse polarity (cathode to case)  
is indicated by Suffix R in part number  
•
Solder temperatures: 260 oC for 10 s (max)  
•
•
WEIGHT: 15 grams  
MOUNTING HARDWARE: Consult factory for  
optional insulator, bushing, solder terminal,  
washers and nut  
•
See package dimensions on last page  
Copyright 2003  
Microsemi  
Page 1  
11-12-2003 REV A  
Scottsdale Division  
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503  
123

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