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1N3035DE3TR PDF预览

1N3035DE3TR

更新时间： 2024-11-23 18:00:55
品牌 Logo 应用领域
美高森美 - MICROSEMI 测试二极管
页数 文件大小 规格书
3页 154K
描述
Zener Diode, 43V V(Z), 1%, 1W, Silicon, Unidirectional, DO-202AA, ROHS COMPLIANT, HERMETIC SEALED, METAL GLASS, DO-13, 2 PIN

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1N3035DE3TR 技术参数

是否Rohs认证： 符合生命周期：Obsolete
零件包装代码：DO-13包装说明：O-MALF-W2
针数：2Reach Compliance Code：unknown
ECCN代码：EAR99HTS代码：8541.10.00.50
风险等级：5.66其他特性：HIGH RELIABILITY
外壳连接：CATHODE配置：SINGLE
二极管元件材料：SILICON二极管类型：ZENER DIODE
JEDEC-95代码：DO-202AAJESD-30 代码：O-MALF-W2
JESD-609代码：e3元件数量：1
端子数量：2最高工作温度：175 °C
最低工作温度：-65 °C封装主体材料：METAL
封装形状：ROUND封装形式：LONG FORM
峰值回流温度（摄氏度）：NOT SPECIFIED极性：UNIDIRECTIONAL
最大功率耗散：1 W认证状态：Not Qualified
标称参考电压：43 V表面贴装：NO
技术：ZENER端子面层：MATTE TIN
端子形式：WIRE端子位置：AXIAL
处于峰值回流温度下的最长时间：NOT SPECIFIED最大电压容差：1%
工作测试电流：6 mABase Number Matches：1

1N3035DE3TR 数据手册

 浏览型号1N3035DE3TR的Datasheet PDF文件第2页浏览型号1N3035DE3TR的Datasheet PDF文件第3页 
1N3016B thru 1N3051B, e3  
1 WATT METAL CASE ZENER DIODES  
S C O T T S D A L E D I V I S I O N  
DESCRIPTION  
APPEARANCE  
This well established zener diode series for the 1N3016 thru 1N3051  
JEDEC registration in the metal case DO-13 package provides a glass  
hermetic seal for 6.8 to 200 volts. It is also well suited for high-reliability  
applications where it is available in JAN, JANTX, and JANTXV military  
qualifications. Lower voltages are also available in the 1N3821 thru  
1N3830 series (3.3 V to 7.5 V) in the same package (see separate data  
sheet). Microsemi also offers numerous other Zener diode products for a  
variety of other packages including surface mount.  
DO-13  
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com  
FEATURES  
APPLICATIONS / BENEFITS  
•
•
•
•
Zener Voltage Range: 6.8V to 200V  
Hermetically sealed DO-13 metal package  
Internally solder-bonded construction.  
•
Regulates voltage over a broad operating current  
and temperature range  
•
•
•
•
•
•
Wide selection from 6.8 to 200 V  
Tight voltage tolerances available  
Low reverse (leakage) currents  
Nonsensitive to ESD  
Also available in JAN, JANTX, JANTXV qualifications  
per MIL-PRF19500/115 by adding the JAN, JANTX,  
or JANTXV prefixes to part numbers for desired level  
of screening, e.g. JANTX1N3016B,  
Hermetically sealed metal package  
JANTXV1N3051B, etc.  
Inherently radiation hard as described in  
Microsemi MicroNote 050  
•
•
Surface mount also available with 1N3016BUR-1 thru  
1N3051BUR-1 series on separate data sheet  
RoHS Compliant devices available by adding “e3” suffix  
MAXIMUM RATINGS  
MECHANICAL AND PACKAGING  
•
•
Operating Junction and Storage Temperatures:  
-65oC to +175oC  
THERMAL RESISTANCE: 50oC/W* junction to lead  
at 0.375 inches (10 mm) from body or 110 oC/W  
junction to ambient when leads are mounted on FR4  
PC board with 4 mm2 copper pads (1 oz) and track  
width 1 mm, length 25 mm  
DC Power Dissipation*: 1.0 Watt at TL < +125oC 3/8”  
(10 mm) from body or 1.0 Watts at TL < +65oC when  
mounted on FR4 PC board as described for thermal  
resistance above (also see Fig 1)  
•
•
CASE: DO-13 (DO-202AA), welded, hermetically  
sealed metal and glass  
FINISH: All external surfaces are Tin-Lead (Pb/Sn)  
or RoHS Compliant annealed matte-Tin (Sn) plating  
and solderable per MIL-STD-750 method 2026  
•
•
•
POLARITY: Cathode connected case.  
WEIGHT: 1.4 grams.  
•
Tape & Reel option: Standard per EIA-296 (add  
“TR” suffix to part number)  
•
See package dimensions on last page  
•
•
Forward Voltage @ 200 mA: 1.5 Volts.  
Solder Temperatures: 260 o C for 10 s (maximum)  
o
*
For further mounting reference options, thermal resistance from junction to metal case is < 20 C/W  
when mounting DO-13 metal case directly on heat sink.  
Copyright © 2006  
3-12-2006 REV B  
Microsemi  
Scottsdale Division  
Page 1  
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503  
123

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