1N3030DUR-1TR

更新时间： 2024-11-21 13:03:27

品牌	Logo	应用领域
美高森美 - MICROSEMI		稳压二极管
页数	文件大小	规格书
3页	192K
描述
Zener Diode, 27V V(Z), 1%, 1.25W, Silicon, Unidirectional, DO-213AB, HERMETIC SEALED, LEADLESS, GLASS, MELF-2

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

1N3030DUR-1TR 技术参数

是否Rohs认证：	不符合	生命周期：	Obsolete
零件包装代码：	DO-213AB	包装说明：	HERMETIC SEALED, LEADLESS, GLASS, MELF-2
针数：	2	Reach Compliance Code：	unknown
ECCN代码：	EAR99	HTS代码：	8541.10.00.50
风险等级：	5.22	其他特性：	METALLURGICALLY BONDED, HIGH RELIABILITY
外壳连接：	ISOLATED	配置：	SINGLE
二极管元件材料：	SILICON	二极管类型：	ZENER DIODE
最大动态阻抗：	35 Ω	JEDEC-95代码：	DO-213AB
JESD-30 代码：	O-LELF-R2	JESD-609代码：	e0
元件数量：	1	端子数量：	2
最高工作温度：	175 °C	封装主体材料：	GLASS
封装形状：	ROUND	封装形式：	LONG FORM
峰值回流温度（摄氏度）：	NOT SPECIFIED	极性：	UNIDIRECTIONAL
最大功率耗散：	1.25 W	认证状态：	Not Qualified
标称参考电压：	27 V	子类别：	Voltage Reference Diodes
表面贴装：	YES	技术：	ZENER
端子面层：	TIN LEAD	端子形式：	WRAP AROUND
端子位置：	END	处于峰值回流温度下的最长时间：	NOT SPECIFIED
最大电压容差：	1%	工作测试电流：	9.5 mA
Base Number Matches：	1

1N3030DUR-1TR 数据手册

1N3016B thru 1N3051B

1 WATT METAL CASE ZENER DIODES

S C O T T S D A L E D I V I S I O N

DESCRIPTION

APPEARANCE

This well established zener diode series for the 1N3016 thru 1N3051

JEDEC registration in the metal case DO-13 package provides a glass

hermetic seal for 6.8 to 200 volts. It is also well suited for high-reliability

applications where it is available in JAN, JANTX, and JANTXV military

qualifications. Lower voltages are also available in the 1N3821 thru

1N3830 series (3.3 V to 7.5 V) in the same package (see separate data

sheet). Microsemi also offers numerous other Zener diode products for a

variety of other packages including surface mount.

DO-13

IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com

FEATURES

APPLICATIONS / BENEFITS

•

Zener Voltage Range: 6.8V to 200V

Hermetically sealed DO-13 metal package

Internally solder-bonded construction.

Also available in JAN, JANTX, JANTXV

qualifications per MIL-PRF19500/115 by adding the

JAN, JANTX, or JANTXV prefixes to part numbers

for desired level of screening, e.g. JANTX1N3016B,

JANTXV1N3051B, etc.

•

Regulates voltage over a broad operating current

and temperature range

•

Wide selection from 6.8 to 200 V

Tight voltage tolerances available

Low reverse (leakage) currents

Nonsensitive to ESD

Hermetically sealed metal package

Inherently radiation hard as described in Microsemi

•

Surface mount also available with 1N3016BUR-1

MicroNote 050

thru 1N3051BUR-1 series on separate data sheet

MAXIMUM RATINGS

MECHANICAL AND PACKAGING

•

Operating Junction and Storage Temperatures:

•

CASE: DO-13 (DO-202AA), welded, hermetically

-65^oC to +175^oC

sealed metal and glass

THERMAL RESISTANCE: 50^oC/W* junction to lead

at 0.375 inches (10 mm) from body or 110 ^oC/W

junction to ambient when leads are mounted on FR4

PC board with 4 mm²copper pads (1 oz) and track

width 1 mm, length 25 mm

•

FINISH: All external surfaces are Tin-Lead (Pb/Sn)

plated and solderable per MIL-STD-750 method

2026

POLARITY: Cathode connected case.

WEIGHT: 1.4 grams.

•

DC Power Dissipation*: 1.0 Watt at T_L< +125^oC 3/8”

(10 mm) from body or 1.0 Watts at T_L< +65^oC when

mounted on FR4 PC board as described for thermal

resistance above (also see Fig 1)

Tape & Reel option: Standard per EIA-296 (add

“TR” suffix to part number)

•

See package dimensions on last page

•

Forward Voltage @ 200 mA: 1.5 Volts.

Solder Temperatures: 260 ^oC for 10 s (maximum)

For further mounting reference, thermal resistance from junction to metal case may be reduced to < 20 ^oC/W

when mounting DO-13 metal case directly on heat sink.

Microsemi

Scottsdale Division

Page 1

11-03-2003 REV A

8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503

12 3

中文翻译

下载PDF

与1N3030DUR-1TR相关器件

型号	品牌	获取价格	描述	数据表
1N3030DUR-1TRE3	MICROSEMI	获取价格	Zener Diode, 27V V(Z), 1%, 1.5W,
1N3030E3	MICROSEMI	获取价格	Zener Diode, 27V V(Z), 20%, 1W, Silicon, Unidirectional, DO-41, HERMETIC SEALED, GLASS PAC
1N3030E3TR	MICROSEMI	获取价格	Zener Diode, 27V V(Z), 20%, 1W, Silicon, Unidirectional, DO-202AA, ROHS COMPLIANT, HERMETI
1N3030TR	MICROSEMI	获取价格	1 WATT METAL CASE ZENER DIODES
1N3030TRE3	MICROSEMI	获取价格	Zener Diode, 27V V(Z), 20%, 1W,
1N3030TRUR-1	MICROSEMI	获取价格	1 WATT METAL CASE ZENER DIODES
1N3030UR-1	MICROSEMI	获取价格	1 WATT METAL CASE ZENER DIODES
1N3030UR-1E3	MICROSEMI	获取价格	Zener Diode, 27V V(Z), 20%, 1W, Silicon, Unidirectional, DO-213AB, HERMETIC SEALED, GLASS,
1N3030UR-1E3TR	MICROSEMI	获取价格	Zener Diode, 27V V(Z), 20%, 1.25W, Silicon, Unidirectional, DO-213AB, ROHS COMPLIANT, HERM
1N3030UR-1TR	MICROSEMI	获取价格	Zener Diode, 27V V(Z), 20%, 1.25W, Silicon, Unidirectional, DO-213AB, HERMETIC SEALED, LEA

与1N3030DUR-1TR相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

31
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

22
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

51
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

50

产品中心

服务支持

精选活动

关于我们

帮助中心

1N3030DUR-1TR

1N3030DUR-1TR 技术参数

1N3030DUR-1TR 数据手册

与1N3030DUR-1TR相关器件

与1N3030DUR-1TR相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

1N3030DUR-1TR

1N3030DUR-1TR 技术参数

1N3030DUR-1TR 数据手册

与1N3030DUR-1TR相关器件

与1N3030DUR-1TR相关文章

您还可以找

您在本页遇到什么问题？