1KSMB39

更新时间： 2024-11-16 13:45:15

品牌	Logo	应用领域
力特 - LITTELFUSE		二极管瞬态抑制器
页数	文件大小	规格书
5页	138K
描述
功能与特色:

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

1KSMB39 数据手册

TransientVoltage Suppression Diodes

Surface Mount – 1000W > 1KSMB series

RoHS

1KSMB Series

Description

The 1KSMB series is designed speciﬁcally to protect

sensitive electronic equipment from voltage transients

induced by lightning and other transient voltage events.

Features

tꢀ)BMPHFOꢁ'SFF

tꢀ -PXꢀJODSFNFOUBMꢀTVSHFꢀ

resistance

tꢀ 3P)4ꢀDPNQMJBOU

tꢀ 5ZQJDBMꢀ*_Rless than 1ꢀA

above 12V

tꢀ 'PSꢀTVSGBDFꢀNPVOUFEꢀ

applications to optimize

board space

tꢀ -PXꢀQSPmMFꢀQBDLBHF

tꢀ #VJMUꢁJOꢀTUSBJOꢀSFMJFG

tꢀ 5ZQJDBMꢀNBYJNVNꢀ

temperature coefﬁcient

ΔV_BR= 0.1% x V_BR@25°C x ΔT

tꢀ )JHIꢀ5FNQFSBUVSFꢀ

soldering guaranteed:

260°C/40 seconds at

terminals

tꢀ 1MBTUJDꢀQBDLBHFꢀIBTꢀ

Underwriters Laboratory

Flammability 94V-O

Agency Approvals

AGENCY

AGENCY FILE NUMBER

E128662

tꢀ (MBTTꢀQBTTJWBUFEꢀDIJQꢀ

junction

tꢀ ꢂꢃꢃꢃ8ꢀQFBLꢀQVMTFꢀQPXFSꢀ

capability at 10×1000μs

waveform, repetition rate

(duty cycles):0.01%

tꢀ .BUUFꢀ5JOꢀ-FBEoGSFFꢀ1MBUFE

tꢀ "WBJMBCMFꢀJOꢀCSFBLEPXOꢀ

Voltage from 6.8V to 160V

specially designed for

Maximum Ratings andThermal Characteristics

(T_A=25^OC unless otherwise noted)

automotive applications

tꢀ 0GGFSTꢀ)JHIꢁ4VSHFꢀSBUJOHꢀJOꢀ

compact package: bridges

the gap between 600W

and 1.5KW

tꢀ 'BTUꢀSFTQPOTFꢀUJNFꢄꢀ

typically less than 1.0ps

from 0V to BV min

tꢀ &YDFMMFOUꢀDMBNQJOHꢀ

capability

Parameter

Symbol

P_PPM

Value

1000

Unit

Peak Pulse Power Dissipation at

T_A=25ºC by 10x1000ꢀs waveform

(Fig.1)(Note 1), (Note 2)

Power Dissipation on inﬁnite heat

sink atT_A=50^OC

P_M(AV)

I_FSM

5.0

Peak Forward Surge Current, 8.3ms

Single Half Sine Wave (Note 3)

100

Applications

Maximum Instantaneous Forward

Voltage at 50A for Unidirectional

only (Note 4)

TVS devices are ideal for the protection of I/O Interfaces,

_CCbus and other vulnerable circuits used inTelecom,

V_F

3.5V/5.0

Computer, Industrial and Consumer electronic applications.

Operating Junction and Storage

Temperature Range

T , T_STG-65 to 150

°C

TypicalThermal Resistance Junction

to Lead

R_uJL

R_uJA

°C/W

TypicalThermal Resistance Junction

to Ambient

100

Notes:

1. Non-repetitive current pulse , per Fig. 3 and derated aboveT_A= 25^OC per Fig. 2.

2. Mounted on copper pad area of 0.2x0.2” (5.0 x 5.0mm) to each terminal.

3. Measured on 8.3ms single half sine wave or equivalent square wave for unidirectional

device only, duty cycle=4 per minute maximum.

4. V_F<3.5V for V_BR<_ 50V and V_F<5.0V for V_BR>_ 51V.

Revision: January 09, 2009

1KSMB Series

Speciﬁcations are subject to change without notice.

Please refer to http://www.Littelfuse.com/series/1KSMB.html for current information.

12 3 4 5

中文翻译

下载PDF

与1KSMB39相关器件

型号	品牌	获取价格	描述	数据表
1KSMB39A	LITTELFUSE	获取价格	Transient Voltage Suppression Diodes
1KSMB39A	RECTRON	获取价格	Package / Case : DO-214AA(SMB);Mounting Style : SMD/SMT;Power Rating : 1000 W;Polarity : U
1KSMB39A-T	RECTRON	获取价格	Trans Voltage Suppressor Diode,
1KSMB39A-W	RECTRON	获取价格	Trans Voltage Suppressor Diode,
1KSMB39C	LITTELFUSE	获取价格	功能与特色:
1KSMB39CA	LITTELFUSE	获取价格	Transient Voltage Suppression Diodes
1KSMB39CA	RECTRON	获取价格	Package / Case : DO-214AA(SMB);Mounting Style : SMD/SMT;Power Rating : 1000 W;Polarity : B
1KSMB43	LITTELFUSE	获取价格	Trans Voltage Suppressor Diode, 1000W, 36.8V V(RWM), Unidirectional, 1 Element, Silicon, D
1KSMB43A	LITTELFUSE	获取价格	Transient Voltage Suppression Diodes
1KSMB43A	RECTRON	获取价格	Package / Case : DO-214AA(SMB);Mounting Style : SMD/SMT;Power Rating : 1000 W;Polarity : U

与1KSMB39相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

11
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

4
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

30
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

13

产品中心

服务支持

精选活动

关于我们

帮助中心

1KSMB39

1KSMB39 数据手册

与1KSMB39相关器件

与1KSMB39相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

1KSMB39

1KSMB39 数据手册

与1KSMB39相关器件

与1KSMB39相关文章

您还可以找

您在本页遇到什么问题？