生命周期: | Obsolete | 包装说明: | RADIAL LEADED |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
风险等级: | 5.78 | 电容: | 47 µF |
电容器类型: | ALUMINUM ELECTROLYTIC CAPACITOR | 介电材料: | ALUMINUM (WET) |
漏电流: | 0.02961 mA | 安装特点: | THROUGH HOLE MOUNT |
负容差: | 20% | 端子数量: | 2 |
最高工作温度: | 105 °C | 最低工作温度: | -55 °C |
封装形状: | CYLINDRICAL PACKAGE | 极性: | POLARIZED |
正容差: | 20% | 额定(直流)电压(URdc): | 63 V |
纹波电流: | 140 mA | 表面贴装: | NO |
Delta切线: | 0.09 | 端子形状: | WIRE |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
1JU41 | TAYCHIPST |
获取价格 |
HIGH SPEED RECTIFIER APPLICATION | |
1JU41 | TOSHIBA |
获取价格 |
RECTIFIER (HIGH SPEED RECTIFIER APPLICATIONS) | |
1JU41TPA1 | TOSHIBA |
获取价格 |
DIODE 1 A, 600 V, SILICON, SIGNAL DIODE, Signal Diode | |
1JU41TPA2 | TOSHIBA |
获取价格 |
DIODE 1 A, 600 V, SILICON, SIGNAL DIODE, Signal Diode | |
1JU41TPA3 | TOSHIBA |
获取价格 |
暂无描述 | |
1JU41TPB2 | TOSHIBA |
获取价格 |
DIODE 1 A, 600 V, SILICON, SIGNAL DIODE, Signal Diode | |
1JU42 | TOSHIBA |
获取价格 |
RECTIFIER (HIGH SPEED RECTIFIER APPLICATIONS) | |
1JU42 | TAYCHIPST |
获取价格 |
HIGH SPEED RECTIFIER APPLICATION | |
1JU42(TPA3.Q) | TOSHIBA |
获取价格 |
Rectifier Diode | |
1JU42TPA2 | TOSHIBA |
获取价格 |
DIODE 1 A, 600 V, SILICON, SIGNAL DIODE, Signal Diode |