1H8-T3-LF

更新时间： 2024-10-30 13:03:27

品牌	Logo	应用领域
WTE		整流二极管
页数	文件大小	规格书
4页	50K
描述
暂无描述

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

1H8-T3-LF 数据手册

WTE

POWER SEMICONDUCTORS

1H1 – 1H8

1.0A ULTRAFAST DIODE

Features

Diffused Junction

Low Forward Voltage Drop

High Current Capability

High Reliability

High Surge Current Capability

Mechanical Data

Case: R-1, Molded Plastic

Terminals: Plated Leads Solderable per

MIL-STD-202, Method 208

Polarity: Cathode Band

Weight: 0.181 grams (approx.)

Mounting Position: Any

Marking: Type Number

Lead Free: For RoHS / Lead Free Version,

Add “-LF” Suffix to Part Number, See Page 4

R-1

Min

20.0

2.90

0.53

2.20

Dim

Max

—

3.50

0.64

2.60

All Dimensions in mm

Maximum Ratings and Electrical Characteristics ^@T_A^{=25°C unless otherwise specified}

Single Phase, half wave, 60Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

Characteristic

Symbol

1H1

1H2

1H3

1H4

1H5

1H6

1H7

1H8

Unit

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

V^RRM

V^RWM

V^R

100

200

140

300

210

400

280

600

420

800

560

1000

700

RMS Reverse Voltage

V^R(RMS)

I^O

Average Rectified Output Current

(Note 1)

1.0

@T_A= 55°C

Non-Repetitive Peak Forward Surge Current

8.3ms Single half sine-wave superimposed on

rated load (JEDEC Method)

I^FSM

Forward Voltage

@I_F= 1.0A

V^FM

I^RM

1.0

1.3

1.7

Peak Reverse Current

@T_A= 25°C

5.0

100

µA

At Rated DC Blocking Voltage @T_A= 100°C

Reverse Recovery Time (Note 2)

Typical Junction Capacitance (Note 3)

Operating Temperature Range

t^rr

C^j

°C

T^j

-65 to +125

-65 to +150

Storage Temperature Range

T^STG

Note: 1. Leads maintained at ambient temperature at a distance of 9.5mm from the case

2. Measured with IF = 0.5A, IR = 1.0A, IRR = 0.25A. See figure 5.

3. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.

1H1 – 1H8

1 of 4

12 3 4

中文翻译

下载PDF

与1H8-T3-LF相关器件

型号	品牌	获取价格	描述	数据表
1H8-TB	WTE	获取价格	1.0A ULTRAFAST DIODE
1H8-TB-LF	WTE	获取价格	Rectifier Diode, 1 Element, 1A, 1000V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC, R-1, 2 PIN
1HD10J98	INFINEON	获取价格	Rectifier Diode, 1 Phase, 196 Element, 2.8A, 1000V V(RRM), Silicon,
1HD12K98	INFINEON	获取价格	Rectifier Diode, 1 Phase, 196 Element, 2.8A, 1200V V(RRM), Silicon,
1HD12R98	INFINEON	获取价格	Rectifier Diode, 1 Phase, 196 Element, 3A, 1200V V(RRM), Silicon,
1HE101-RB	HONEYWELL	获取价格	Snap Acting/Limit Switch, SPDT, Momentary, 5A, 28VDC, 7.366mm, Connector Terminal, Panel M
1HE101-RB1	HONEYWELL	获取价格	Snap Acting/Limit Switch, SPDT, Momentary, 5A, 28VDC, 1.29mm, Connector Terminal, Plunger
1HE1-6B	HONEYWELL	获取价格	Snap Acting/Limit Switch, SPDT, Momentary, 5A, 28VDC, 7.37mm, Wire Terminal, Steel Plunger
1HE1-S	HONEYWELL	获取价格	Snap Acting/Limit Switch, SPDT, Momentary, 5A, 28VDC, 7.37mm, Screw Terminal, Steel Plunge
1HN04CH	SANYO	获取价格	N-Channel Silicon MOSFET General-Purpose Switching Device Applications