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1H6(G) PDF预览

1H6(G)

更新时间: 2024-11-29 14:52:55
品牌 Logo 应用领域
鲁光 - LGE 整流二极管高效整流二极管
页数 文件大小 规格书
2页 988K
描述
高效整流二极管

1H6(G) 技术参数

Case Style:R-1Maximum average forward rectified current:1
Maximum recurrent peak reverse voltage:600Peak forward surge current:30
Maximum instantaneous forward voltage:1.7Maximum reverse current:5.0
TRR(nS):75class:Diodes

1H6(G) 数据手册

 浏览型号1H6(G)的Datasheet PDF文件第2页 
1H1G-1H8G  
High Efficiency Rectifiers  
VOLTAGE RANGE: 50 --- 1000 V  
CURRENT: 1.0 A  
Features  
R - 1  
Diffused junction  
Glass passivated chip junction  
High current capability  
High reliability  
High surge current capability  
Mechanical Data  
Case:JEDEC R-1,molded plastic  
Polarity: Color band denotes cathode  
Weight: 0.007 ounces,0.20 grams  
Mounting position: Any  
Dimensions in millimeters  
MAXIMUM RAT INGS AND ELECT RICAL CHARACT ERIST ICS  
Ratings at 25 ambient temperature unless otherwise specified.  
Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%.  
UNITS  
1H1G 1H2G 1H3G 1H4G 1H5G 1H6G 1H7G 1H8G  
Maximum recurrent peak reverse voltage  
Maximum RMS voltage  
50  
35  
50  
100  
70  
200 300 400 600 800 1000  
140 210 280 420 560 700  
200 300 400 600 800 1000  
V
V
V
VRRM  
VRMS  
VDC  
Maximum DC blocking voltage  
100  
Maximum average forw ard rectified current  
1.0  
A
IF(AV)  
9.5mm lead length,  
@TA=75  
Peak forw ard surge current  
8.3ms single half-sine-w ave  
IFSM  
30.0  
A
superimposed on rated load @TJ=125  
Maximum instantaneous forw ard voltage  
@ 1.0 A  
1.0  
1.3  
1.7  
VF  
IR  
V
A
Maximum reverse current  
@TA=25  
5.0  
at rated DC blocking voltage  
@TA=100  
100.0  
Maximum reverse recovery time (Note1)  
50  
20  
70  
15  
ns  
pF  
/W  
t rr  
Typical junction capacitance  
Typical thermal resistance  
(Note2)  
(Note3)  
CJ  
60  
Rθ  
JA  
Operating junction temperature range  
- 55 ---- + 150  
- 55 ---- + 150  
TJ  
Storage temperature range  
TSTG  
NOTE: 1. Measured with IF=0.5A, IR=1A, Irr=0.25A.  
2. Measured at 1.0MHZ and applied rev erse v oltage of 4.0V DC.  
3. Thermal resistance from junction to ambient.  
http://www.lgesemi.com  
mail:lge@lgesemi.com  
Revision:20170701-P1  

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