Datasheet > 1C6625

1C6625

更新时间： 2024-02-07 10:13:40

品牌	Logo	应用领域
SENSITRON		/
页数	文件大小	规格书
2页	33K
描述
Rectifier Diode, 1 Element, 1A, 1000V V(RRM), Silicon, DIE-1

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1C6625 数据手册

1C6623

1C6624

1C6625

SENSITRON

SEMICONDUCTOR

TECHNICAL DATA

DATASHEET 5130, REV-

SILICON ULTRA-FAST RECOVERY EPITAXIAL RECTIFIER DIE

Applications:

•

Switching Power Supply • Converters • Free-Wheeling Diodes • Polarity Protection Diode

Features:

•

Glass passivated Epitaxial Diode with Mesa Structure

Soft Reverse Recovery at Low and High Temperature

Low Forward Voltage Drop and Low Reverse Current

Electrically and Mechanically Stable during and after Packaging

Maximum Ratings:

Characteristics

Peak Inverse Voltage

1C6623

1C6624

1C6625

Max. Output Current

Symbol

V_RWM

Condition

Max.

Units

800

900

1000

1.0

I_O

50% duty cycle, rectangular wave

form; T_A= 55 ^oC

Max. Peak One Cycle Non-

Repetitive Surge Current

1C6623

I_FSM

8.3 ms, sine pulse ⁽¹⁾

1C6624

1C6625

Max. Junction Temperature

Max. Storage Temperature

Reverse Recovery Time

1C6623

T_J

T_stg

t_rr

-55 to +175

-55 to +200

°C

I_F=0.5A, I_R=1.0A, I_RM=0.25A

1C6624

1C6625

Electrical Characteristics:

Characteristics

Max. Forward Voltage Drop

1C6623

Symbol

Condition

1.5A, pulse, T_J= 25 °C

Max.

Units

V_F1

1.80

1.95

1C6624

1C6625

Max. Reverse Current

1C6623

I_R1

V_R= V_RWM, pulse, T_J= 25 °C

μA

0.5

1.0

150

1C6624

1C6625

I_R2

C_T

V_R= V_RWM, pulse, T_J= 150 °C

V_R= 10V, T_C= 25 °C

μA

Max. Junction Capacitance

(1) in TO package

_SIG= 0.1 to 1MHz,

_SIG= 50mV (p-p)

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