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1C6623BG PDF预览

1C6623BG

更新时间: 2024-02-08 21:30:12
品牌 Logo 应用领域
SENSITRON 二极管
页数 文件大小 规格书
2页 33K
描述
800V, SILICON, SIGNAL DIODE, DIE-1

1C6623BG 技术参数

是否Rohs认证: 不符合生命周期:Active
包装说明:R-XUUC-N1Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.40
风险等级:5.78其他特性:FREE WHEELING DIODE
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODEJESD-30 代码:R-XUUC-N1
JESD-609代码:e0元件数量:1
端子数量:1最高工作温度:175 °C
最低工作温度:-55 °C封装主体材料:UNSPECIFIED
封装形状:RECTANGULAR封装形式:UNCASED CHIP
峰值回流温度(摄氏度):NOT SPECIFIED最大重复峰值反向电压:800 V
最大反向恢复时间:0.05 µs表面贴装:YES
端子面层:TIN LEAD端子形式:NO LEAD
端子位置:UPPER处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

1C6623BG 数据手册

 浏览型号1C6623BG的Datasheet PDF文件第1页 
1C6623  
1C6624  
1C6625  
SENSITRON  
SEMICONDUCTOR  
TECHNICAL DATA  
DATASHEET 5130, REV-  
Mechanical Dimensions: In Inches (mm)  
Bottom side metalization: Ti/Ni/Ag - 30 kÅ minimum.  
Top side metalization: Al - 25 kÅ minimum  
Bottom side is cathode, top side is anode.  
0.020 ± 0.003  
(0.508 ± 0.076) (0.864 ± 0.076)  
0.034 ± 0.003  
ANODE  
Anode  
0.009 ± 0.001 (0.229 ± 0.025)  
Cathode  
PART ORDERING INFORMATION  
Default part number is Al top, Ag bottom.  
Add the following suffix for these metal combinations:  
Suffix  
Top  
Bottom  
Part Number  
Al  
Al  
Ag  
Ag  
Au  
Au  
Ag  
Au  
Ag  
Au  
Au  
Ag  
1C3595  
AG  
BB  
BG  
GG  
GB  
-R  
1C3595AG  
1C3595BB  
1C3595BG  
1C3595GG  
1C3595GB  
1C3595-R  
- Reverse polarity -  
A = Ti (0.3 kA) / Al (25 kA)  
B = Ti (1.2 kA) / Ni (1.8 kA) / Ag (30kA)  
G = Ti (1.2 kA) / Ni (1.8 kA) / Au (12kA) (TOP) / Ti (1.2 kA) / Ni (1.8 kA) / Au (4kA) (BOTTOM)  
DISCLAIMER:  
1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product  
characteristics. Before ordering, purchasers are advised to contact the Sensitron Semiconductor sales department for the latest version of the  
datasheet(s).  
2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment, medical  
equipment , and safety equipment) , safety should be ensured by using semiconductor devices that feature assured safety or by means of users’  
fail-safe precautions or other arrangement .  
3- In no event shall Sensitron Semiconductor be liable for any damages that may result from an accident or any other cause during operation of  
the user’s units according to the datasheet(s). Sensitron Semiconductor assumes no responsibility for any intellectual property claims or any  
other problems that may result from applications of information, products or circuits described in the datasheets.  
4- In no event shall Sensitron Semiconductor be liable for any failure in a semiconductor device or any secondary damage resulting from use at  
a value exceeding the absolute maximum rating.  
5- No license is granted by the datasheet(s) under any patents or other rights of any third party or Sensitron Semiconductor.  
6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed written permission of Sensitron  
Semiconductor.  
7- The products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their application will hinder  
maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any third party. When  
exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and regulations.  
©2012 Sensitron Semiconductor 221 West Industry Court Deer Park, NY 11729-4681  
(631) 586-7600 FAX (631) 242-9798 www.sensitron.com sales@sensitron.com •  

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