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1C6622 PDF预览

1C6622

更新时间: 2024-01-25 20:32:25
品牌 Logo 应用领域
SENSITRON 超快恢复二极管快速恢复二极管
页数 文件大小 规格书
2页 258K
描述
Rectifier Diode, 1 Phase, 1 Element, 1.2A, Silicon, DIE

1C6622 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Active零件包装代码:DIE
包装说明:S-XUUC-N2Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.40
风险等级:5.84其他特性:FREE WHEELING DIODE
应用:ULTRA FAST RECOVERY配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
JESD-30 代码:S-XUUC-N2最大非重复峰值正向电流:20 A
元件数量:1相数:1
端子数量:2最高工作温度:175 °C
最低工作温度:-55 °C最大输出电流:1.2 A
封装主体材料:UNSPECIFIED封装形状:SQUARE
封装形式:UNCASED CHIP峰值回流温度(摄氏度):NOT SPECIFIED
认证状态:Not Qualified最大反向恢复时间:0.03 µs
表面贴装:YES端子形式:NO LEAD
端子位置:UPPER处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

1C6622 数据手册

 浏览型号1C6622的Datasheet PDF文件第2页 
SENSITRON  
1C6622  
SEMICONDUCTOR  
TECHNICAL DATA  
DATASHEET 345, REV B  
SILICON ULTRA-FAST RECOVERY EPITAXIAL RECTIFIER DIE  
Applications:  
Switching Power Supply Converters Free-Wheeling Diodes Polarity Protection Diode  
Features:  
Glass passivated Epitaxial Diode with Mesa Structure  
Soft Reverse Recovery at Low and High Temperature  
Low Forward Voltage Drop and Low Reverse Current  
Electrically and Mechanically Stable during and after Packaging  
Maximum Ratings:  
Characteristics  
Peak Inverse Voltage  
Max. Output Current  
Symbol  
VRWM  
IO  
Condition  
-
50% duty cycle, rectangular  
wave form; TA = 55 oC  
8.3 ms, sine pulse (1)  
Max.  
600  
1.2  
Units  
V
A
Max. Peak One Cycle Non-  
Repetitive Surge Current  
Max. Junction Temperature  
Max. Storage Temperature  
IFSM  
20  
A
TJ  
Tstg  
-
-
-55 to +175  
-55 to +200  
C
C
Electrical Characteristics:  
Characteristics  
Symbol  
Condition  
IR = 50 µA; TJ = 25 C  
IF = 1.2 A, pulse, TJ = 25 C  
IF = 2.0 A, pulse, TJ = 25 C  
VR = VRWM, pulse, TJ = 25 C  
VR = VRWM, pulse, TJ = 150 C  
VR = 10 V, TC = 25 C, fSIG = 1 MHz,  
VSIG = 50 mV (p-p)  
IF=0.5A, IR=1.0A, IRM=0.25A  
Min. Max.  
Units  
V
660  
1.4  
1.6  
0.5  
150  
Breakdown Voltage  
Forward Voltage Drop  
VRM  
VF1  
VF2  
IR1  
IR2  
CT  
V
Max. Reverse Leakage Current  
A
A
pF  
ns  
Max. Junction Capacitance  
Reverse Recovery Time  
10  
30  
trr  
Mechanical Dimensions: In Inches (mm)  
Top side metalization: Al - 25 kÅ minimum  
Bottom side metalization: Ti/Ni/Ag - 30 kÅ minimum.  
Bottom side is cathode, top side is anode.  
0.020 0.003  
(0.508 0.076) (0.864 0.076)  
0.034 0.003  
ANODE  
Anode  
0.009 ± 0.001 (0.229 ± 0.025)  
Cathode  
©2012 Sensitron Semiconductor 221 West Industry Court Deer Park, NY 11729-4681  
(631) 586-7600 FAX (631) 242-9798 www.sensitron.com sales@sensitron.com  

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