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1C6623BG PDF预览

1C6623BG

更新时间: 2024-01-12 12:55:58
品牌 Logo 应用领域
SENSITRON 二极管
页数 文件大小 规格书
2页 33K
描述
800V, SILICON, SIGNAL DIODE, DIE-1

1C6623BG 技术参数

是否Rohs认证: 不符合生命周期:Active
包装说明:R-XUUC-N1Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.40
风险等级:5.78其他特性:FREE WHEELING DIODE
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODEJESD-30 代码:R-XUUC-N1
JESD-609代码:e0元件数量:1
端子数量:1最高工作温度:175 °C
最低工作温度:-55 °C封装主体材料:UNSPECIFIED
封装形状:RECTANGULAR封装形式:UNCASED CHIP
峰值回流温度(摄氏度):NOT SPECIFIED最大重复峰值反向电压:800 V
最大反向恢复时间:0.05 µs表面贴装:YES
端子面层:TIN LEAD端子形式:NO LEAD
端子位置:UPPER处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

1C6623BG 数据手册

 浏览型号1C6623BG的Datasheet PDF文件第2页 
1C6623  
1C6624  
1C6625  
SENSITRON  
SEMICONDUCTOR  
TECHNICAL DATA  
DATASHEET 5130, REV-  
SILICON ULTRA-FAST RECOVERY EPITAXIAL RECTIFIER DIE  
Applications:  
Switching Power Supply Converters Free-Wheeling Diodes Polarity Protection Diode  
Features:  
Glass passivated Epitaxial Diode with Mesa Structure  
Soft Reverse Recovery at Low and High Temperature  
Low Forward Voltage Drop and Low Reverse Current  
Electrically and Mechanically Stable during and after Packaging  
Maximum Ratings:  
Characteristics  
Peak Inverse Voltage  
1C6623  
1C6624  
1C6625  
Max. Output Current  
Symbol  
VRWM  
Condition  
Max.  
Units  
V
-
800  
900  
1000  
1.0  
IO  
50% duty cycle, rectangular wave  
form; TA = 55 oC  
A
A
Max. Peak One Cycle Non-  
Repetitive Surge Current  
1C6623  
IFSM  
8.3 ms, sine pulse (1)  
20  
20  
1C6624  
1C6625  
15  
Max. Junction Temperature  
Max. Storage Temperature  
Reverse Recovery Time  
1C6623  
TJ  
Tstg  
trr  
-
-
-55 to +175  
-55 to +200  
°C  
°C  
nS  
IF=0.5A, IR=1.0A, IRM=0.25A  
50  
50  
60  
1C6624  
1C6625  
Electrical Characteristics:  
Characteristics  
Max. Forward Voltage Drop  
1C6623  
Symbol  
Condition  
1.5A, pulse, TJ = 25 °C  
Max.  
Units  
VF1  
V
1.80  
1.80  
1.95  
1C6624  
1C6625  
Max. Reverse Current  
1C6623  
IR1  
VR = VRWM, pulse, TJ = 25 °C  
μA  
0.5  
0.5  
1.0  
150  
10  
1C6624  
1C6625  
IR2  
CT  
VR = VRWM, pulse, TJ = 150 °C  
VR = 10V, TC = 25 °C  
μA  
pF  
Max. Junction Capacitance  
(1) in TO package  
f
SIG = 0.1 to 1MHz,  
SIG = 50mV (p-p)  
V
©2012 Sensitron Semiconductor 221 West Industry Court Deer Park, NY 11729-4681  
(631) 586-7600 FAX (631) 242-9798 www.sensitron.com sales@sensitron.com •  

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