Datasheet > 1C5616-R

1C5616-R

更新时间： 2024-01-07 17:49:18

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数据手册

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1C5616-R 数据手册

1C5614

1C5616

1C5618

1C5620

1C5622

SENSITRON

SEMICONDUCTOR

TECHNICAL DATA

DATA SHEET 5061, REV. B.1

GENERAL PURPOSE

SILICON RECTIFIER DIE

Maximum Ratings:

Characteristics

Peak Inverse Voltage

1C5614

Symbol

V_RWM

Condition

Max.

Units

200

400

1C5616

1C5618

600

1C5620

800

1C5622

1000

Max. Average Forward Current

Die Size

Max. Junction Temperature

Max. Storage Temperature

I_F(AV)

T_J

1.0

-55 to +175

@ 55C

mil

C

T_stg

Electrical Characteristics:

Characteristics

Symbol

Condition

@ 3.0A, Pulse, T_J= 25 C

Duty cycle  2%, pulse width 

300s

Max.

1.3

Units

Max. Forward Voltage Drop

V_F1

Max. Reverse Current

Reverse Recovery Time

I_R1

I_R2

t_rr

@V_R= 200V, Pulse,

T_J= 25 C

@V_R= 200V, Pulse,

T_J= 100 C

I_f= 500mA, I_r= 1A, I_rm

0.5

A

2000

250mA

Mechanical Dimensions: In Inches / mm for 1C5614

Top side metalization - Aluminum - 25 kÅ

Bottom side metalization - Titanium 1.2 kÅ,

Nickel 1.8 kÅ, Silver - 30 kÅ minimum

0.024  0.003

(0.610  0.076) (1.016  0.076)

0.040  0.003

ANODE

Bottom side is cathode, top side is anode.

See part ordering information for different options

Anode

0.009 ± 0.001 (0.229 ± 0.025)

Cathode

 (631) 586-7600 FAX (631) 242-9798  www.sensitron.com  sales@sensitron.com

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