Datasheet > 1B10

1B10

更新时间： 2024-11-16 20:36:27

品牌	Logo	应用领域
英飞凌 - INFINEON		光电二极管
页数	文件大小	规格书
4页	53K
描述
Bridge Rectifier Diode, 1 Phase, 1A, 1000V V(RRM), Silicon, DIP-4

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1B10 数据手册

Bulletin E2788 rev. D 04/00

1BSERIES

1A Single Phase D.I.L. Rectifier Bridge

• Leads on standard 0.1" grid

• Suitable for automatic insertion

• High surge current capability

• Fully characterised data

• Widetemperaturerange

• Surfacemountoption

I_O(av)= 1.0 A

V_RRMrange

50 to 1000V

I_O(av)

Description

The 1B Series of Single Phase Rectifier Bridges

consists of four silicon junctions encapsulated in

a4pinD.I.L.package.Thesedevicesareintended

for general use in industrial and consumer equip-

ment.

Electrical Specification

1B...

Units Conditions

I_O

Maximum DC output

current

1.0

0.8

T_amb= 40^oC, Resistive or inductive load

T_amb= 40^oC, Capacitive load

I_FSM

Maximum peak one

cycle, non-repetitive

surge current

t = 10ms, 20ms

Following any rated

load condition and with

rated V_RRMreapplied

Initial T_J= T_Jmax

t = 8.3ms, 16.7ms

I²t

Maximum I²t capability

4.5

4.1

6.4

5.8

A²s

A²√s

t = 10ms

t = 8.3ms

t = 10ms

t = 8.3ms

for fusing

100% V_RRMreapplied

Initial T_J= T_Jmax

no voltage reapplied

I²√t

V_FM

I_RM

Maximum I²√t

t = 0.1 to 10ms, no voltage reapplied

capability for fusing

Maximum peak forward

voltage per diode

Typical peak reverse

leakage per diode

Operating frequency

range

1.0

I_FM= 1.0A, T_J= 25^oC

µA

T_J= 25^oC, 100% V_RRM

T_J= 150^oC, 100% V_RRM

100

50 to 1000

V_RRM

Maximum repetitive peak

reverse voltage range

50 to 1000

Thermal and Mechanical Specifications

1B...

Units Conditions

T_J

Operating and storage

temperature range

Thermal resistance,

junctions to ambient

Approximate weight

- 55 to 150

^oC

T_stg

R_thJA

K/W

0.6 (0.02)

g (oz)

12 3 4

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