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1N5711 PDF预览

1N5711

更新时间: 2024-01-27 07:29:54
品牌 Logo 应用领域
鲁光 - LGE 小信号肖特基二极管
页数 文件大小 规格书
2页 137K
描述
Small Signal Schottky Diodes

1N5711 技术参数

是否Rohs认证:符合生命周期:Obsolete
包装说明:R-PDSO-G2针数:2
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.70风险等级:5.45
Is Samacsys:N配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
JESD-30 代码:R-PDSO-G2JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:2最大输出电流:0.015 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
最大功率耗散:0.15 W认证状态:Not Qualified
最大重复峰值反向电压:70 V最大反向恢复时间:0.001 µs
表面贴装:YES技术:SCHOTTKY
端子面层:Matte Tin (Sn)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:10
Base Number Matches:1

1N5711 数据手册

 浏览型号1N5711的Datasheet PDF文件第2页 
1N5711  
Small Signal Schottky Diodes  
VOLTAGE RANGE: 70V  
POWER DISSIPATION: 400 mW  
DO - 35(GLASS)  
Features  
For general purpose applications  
Metal silicon schottky barrier device which is protected  
by a PN junction guard ring. The low forward voltage  
drop and fast switching make it ideal for protection of  
MOS devices,steering,biasing and coupling diodes for  
fast switching and low logic level applications  
Mechanical Data  
Case:JEDEC DO--35,glass case  
Dimensions in millimeters  
Polarity: Color band denotes cathode end  
Weight: Approx. 0.13 gram  
ABSOLUTE RATINGS(LIMITING VALUES)  
Symbols  
Value  
70.0  
UNITS  
Peak reverse voltage  
V
zmW  
A
VRRM  
Ptot  
4001)  
2.0  
Pow er dissipation (Infinite Heat Sink)  
Maximum single cycle surge 10 s square w ave  
Junction tenperature  
IFSM  
TJ  
125  
Storage temperature range  
c-55 ---+ 150  
TSTG  
1)Valid provided that leads at a distance of 4mm from case are kept at ambient temperature  
ELECTRICAL CHARACTERISTICS  
(Ratings at 25 ambient temperature unless otherw ise specified)  
Symbols  
Typ.  
Max.  
Min.  
70.0  
UNITS  
Reverse breakdow n voltage  
@ IR=10  
A
VR  
IR  
V
Leakage current  
@ VR=50V  
IF=1mA  
IF=15mA  
Junction capacitance @ VR=0V,f=1MHz  
200.0  
0.41  
1.0  
2
anA  
Forw ard voltage drop  
@
VF  
V
CJ  
trr  
pF  
Reverse recovery time @ IF=IR=5mA,recover to 0.1 IR  
Termal resistance junction to ambient air  
1
ns  
0.3  
Rθ  
/mW  
JA  
http://www.luguang.cn  
mail:lge@luguang.cn  

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