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1N4148W

更新时间： 2024-02-22 09:42:52
品牌 Logo 应用领域
德州仪器 - TI 稳压器二极管光电二极管IOT
页数 文件大小 规格书
31页 1178K
描述
LM2736 Thin SOT 750mA Load Step-Down DC-DC Regulator

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1N4148W 技术参数

是否Rohs认证： 符合生命周期：Active
Reach Compliance Code：unknownECCN代码：EAR99
HTS代码：8541.10.00.70风险等级：5.76
配置：SINGLE二极管类型：RECTIFIER DIODE
最大正向电压 (VF)：0.715 V最大非重复峰值正向电流：2 A
元件数量：1最高工作温度：150 °C
最大输出电流：0.15 A最大重复峰值反向电压：75 V
最大反向恢复时间：0.004 µs子类别：Rectifier Diodes
表面贴装：YESBase Number Matches：1

1N4148W 数据手册

 浏览型号1N4148W的Datasheet PDF文件第6页浏览型号1N4148W的Datasheet PDF文件第7页浏览型号1N4148W的Datasheet PDF文件第8页浏览型号1N4148W的Datasheet PDF文件第10页浏览型号1N4148W的Datasheet PDF文件第11页浏览型号1N4148W的Datasheet PDF文件第12页 
LM2736  
www.ti.com  
SNVS316F –SEPTEMBER 2004–REVISED APRIL 2013  
When the NMOS switch turns on (TON), the switch pin rises to  
VSW = VIN – (RDSON x IL),  
(2)  
forcing VBOOST to rise thus reverse biasing D2. The voltage at VBOOST is then  
VBOOST = 2VIN – (RDSON x IL) – VFD2 + VFD1  
(3)  
(4)  
(5)  
which is approximately  
2VIN - 0.4V  
for many applications. Thus the gate-drive voltage of the NMOS switch is approximately  
VIN - 0.2V  
An alternate method for charging CBOOST is to connect D2 to the output as shown in Figure 21. The output  
voltage should be between 2.5V and 5.5V, so that proper gate voltage will be applied to the internal switch. In  
this circuit, CBOOST provides a gate drive voltage that is slightly less than VOUT  
.
In applications where both VIN and VOUT are greater than 5.5V, or less than 3V, CBOOST cannot be charged  
directly from these voltages. If VIN and VOUT are greater than 5.5V, CBOOST can be charged from VIN or VOUT  
minus a zener voltage by placing a zener diode D3 in series with D2, as shown in Figure 22. When using a  
series zener diode from the input, ensure that the regulation of the input supply doesn’t create a voltage that falls  
outside the recommended VBOOST voltage.  
(VINMAX – VD3) < 5.5V  
(VINMIN – VD3) > 1.6V  
D2  
D3  
V
V
BOOST  
SW  
V
IN  
IN  
BOOST  
C
BOOST  
C
IN  
L
V
OUT  
GND  
C
D1  
OUT  
Figure 22. Zener Reduces Boost Voltage from VIN  
An alternative method is to place the zener diode D3 in a shunt configuration as shown in Figure 23. A small  
350mW to 500mW 5.1V zener in a SOT or SOD package can be used for this purpose. A small ceramic  
capacitor such as a 6.3V, 0.1µF capacitor (C4) should be placed in parallel with the zener diode. When the  
internal NMOS switch turns on, a pulse of current is drawn to charge the internal NMOS gate capacitance. The  
0.1 µF parallel shunt capacitor ensures that the VBOOST voltage is maintained during this time.  
Resistor R3 should be chosen to provide enough RMS current to the zener diode (D3) and to the BOOST pin. A  
recommended choice for the zener current (IZENER) is 1 mA. The current IBOOST into the BOOST pin supplies the  
gate current of the NMOS control switch and varies typically according to the following formula for the X -  
version:  
IBOOST = 0.49 x (D + 0.54) x (VZENER – VD2) mA  
(6)  
IBOOST can be calculated for the Y version using the following:  
IBOOST = 0.20 x (D + 0.54) x (VZENER - VD2) µA  
(7)  
where D is the duty cycle, VZENER and VD2 are in volts, and IBOOST is in milliamps. VZENER is the voltage applied to  
the anode of the boost diode (D2), and VD2 is the average forward voltage across D2. Note that this formula for  
IBOOST gives typical current. For the worst case IBOOST, increase the current by 40%. In that case, the worst case  
boost current will be  
IBOOST-MAX = 1.4 x IBOOST  
(8)  
R3 will then be given by  
R3 = (VIN - VZENER) / (1.4 x IBOOST + IZENER  
)
(9)  
For example, using the X-version let VIN = 10V, VZENER = 5V, VD2 = 0.7V, IZENER = 1mA, and duty cycle D = 50%.  
Then  
Copyright © 2004–2013, Texas Instruments Incorporated  
Submit Documentation Feedback  
9
Product Folder Links: LM2736  
 
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