Datasheet > 1N4148

1N4148

更新时间： 2024-10-26 12:26:59

品牌	Logo	应用领域
戈采 - FCI		二极管局域网
页数	文件大小	规格书
2页	123K
描述
500 mW EPITAXIAL PLANAR DIODES

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中文翻译

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数据手册

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1N4148 数据手册

Data Sheet

500 mW EPITAXIAL

PLANAR DIODES

MechanicalDimensions

Description

DO-35 (Glass)

Dimensions in inches(mm)

Features

Mechanical Data

■ Silicon Epitaxial Planar Diode

■ Case: DO-35 Glass

■ 500mW Power Dissipation

■ Terminals: Solderable per

MIL-STD-202E Method 208

■ Polarity: Cathode Band

■ Weight: 0.13grams

■ Pb Free product are Available

■ Bulk--2K, 13" T/R--10K, T/B--5K Ammo Box

Max Ratings at Tj=25C Unless Otherwise Specified

Characteristic

Syb

1N4148/1N4448

Unit

Reverse Voltage

Peak Reverse Voltage

VRM

IF^(AV)

I^FSM

100

150

500

Average Rectified Current

Surge Forward Current at t<1s

Power Dissipation Derate above at 25C

Storage Temp. Range

-55~+200

200

Junction Temp. Range

Max Forward Voltage @ If=10mA ---1N4148

1.0 max

If=100mA--1N4448

Reverse Voltage Leakage Current Vr=20V

Vr=75V

Vr=25V at Tj=150C

Reerse Breakdown Voltage tested width 100uA

100 min.

Vbr

Vfr

Voltage rise when switching on tseted with 50mA

pulses tp=0.1us, rise time<30ns, fp=5~100kHz

2.5 max.

Recerse Recovery Time

4 max.

trr

Capacitance at VF=VR=0

Ctot

Rthja

Max Thermal Resistance Junction to Ambient Air

* lead lept at ambient temp. at 8mm length

350

k/W

中文翻译

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1N4148,133	NXP	获取价格	1N4148; 1N4448 - High-speed diodes AXIAL 2-Pin
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