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19TQ015-N3 PDF预览

19TQ015-N3

更新时间: 2024-11-23 07:20:03
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
7页 165K
描述
Schottky Rectifier, 19 A

19TQ015-N3 数据手册

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VS-19TQ015PbF, VS-19TQ015-N3  
www.vishay.com  
Vishay Semiconductors  
Schottky Rectifier, 19 A  
FEATURES  
• 125 °C TJ operation (VR < 5 V)  
• Optimized for OR-ing applications  
• Ultralow forward voltage drop  
• High frequency operation  
Base  
cathode  
2
• Guard ring for enhanced ruggedness and long  
term reliability  
1
3
TO-220AC  
Cathode Anode  
• High  
purity,  
high  
temperature  
epoxy  
encapsulation for enhanced mechanical strength  
and moisture resistance  
• Compliant to RoHS Directive 2002/95/EC  
• Designed and qualified according to JEDEC-JESD47  
PRODUCT SUMMARY  
• Halogen-free according to IEC 61249-2-21 definition  
(-N3 only)  
Package  
TO-220AC  
19 A  
IF(AV)  
VR  
15 V  
DESCRIPTION  
VF at IF  
0.32 V  
The VS-19TQ015... Schottky rectifier has been optimized for  
ultralow forward voltage drop specifically for the OR-ing of  
parallel power supplies. The proprietary barrier technology  
allows for reliable operation up to 125 °C junction  
temperature. Typical applications are in parallel switching  
power supplies, converters, reverse battery protection, and  
redundant power subsystems.  
IRM max.  
TJ max.  
Diode variation  
522 mA at 100 °C  
125 °C  
Single die  
EAS  
6.75 mJ  
MAJOR RATINGS AND CHARACTERISTICS  
SYMBOL  
IF(AV)  
VRRM  
IFSM  
CHARACTERISTICS  
VALUES  
19  
UNITS  
Rectangular waveform  
A
V
15  
tp = 5 μs sine  
19 Apk, TJ = 75 °C  
Range  
700  
A
VF  
0.32  
V
TJ  
- 55 to 125  
°C  
VOLTAGE RATINGS  
PARAMETER  
SYMBOL  
VS-19TQ015PbF  
VS-19TQ015-N3  
15  
UNITS  
Maximum DC reverse voltage  
Maximum working peak reverse voltage  
VR  
15  
V
VRWM  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
VALUES  
UNITS  
Maximum average forward current  
See fig. 5  
IF(AV)  
50 % duty cycle at TC = 80 °C, rectangular waveform  
19  
A
Maximum peak one cycle  
non-repetitive surge current  
See fig. 7  
5 µs sine or 3 µs rect. pulse  
10 ms sine or 6 ms rect. pulse  
700  
Following any rated load  
condition and with rated  
VRRM applied  
IFSM  
330  
Non-repetitive avalanche energy  
Repetitive avalanche current  
EAS  
IAR  
TJ = 25 °C, IAS = 1.50 A, L = 6 mH  
6.75  
mJ  
A
Current decaying linearly to zero in 1 μs  
Frequency limited by TJ maximum VA = 3 x VR typical  
1.50  
Revision: 25-Aug-11  
Document Number: 94151  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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