Datasheet > 1951A

1951A

更新时间： 2024-11-20 22:09:19

品牌	Logo	应用领域
三菱 - MITSUBISHI		微波
页数	文件大小	规格书
4页	31K
描述
Medium Power Microwave MESFET

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1951A 数据手册

MITSUBISHI SEMICONDUTOR <GaAs FET>

PRELIMINARY

MGF1951A

Medium Power Microwave MESFET

DESCRIPTION

The MGF1951A is a 20mW MESFET for S- to Ku-band

driver amplifiers and oscillators.

Its lead-less ceramic package assures minimum parasitics.

FEATURES

• High Gain and High Output Power

G_LP=9dB, P_1dB=13dBm (typ) @ f=12GHz

• Leadless Ceramic Package

APPLICATION

S- to Ku-Band Driver Amplifiers and Oscillators

QUALITY

General Grade

ORDERING INFORMATION

Part Number

Quantity

Supply Form

Tape & Reel

Keep Safety first in your circuit designs!

MGF1951A-01

3.000 pcs/reel

Mitsubishi Electric Corporation puts the

maximum effort into making semiconductor

products better and more reliable, but there is

always the possibility that trouble may occur

with them. Trouble with semiconductors may

lead to personal injury, fire or property

ABSOLUTE MAXIMUM RATINGS (T_a=+25°C)

Symbol Parameter

Rating

Unit

damage.

Remember

give

due

V_GDO

V_GSO

I_D

Gate to Drain Voltage

-8

consideration to safety when making your

circuit designs, with appropriate measure

such as (i) placement of substitutive, auxiliary

circuits, (ii) use of non-flammable material or

(iii) prevention against any malfunction or

mishap.

Gate to Source Voltage

Drain Current

120

°C

P_T

Total Power Dissipation

Channel Temperature

Storage Temperature

300

T_ch

125

T_stg

-65 to +125

°C

ELECTRICAL CHARACTERISTICS (T_a=+25°C)

Symbol Parameter

Test Conditions

I_G=-30µA

MIN

-8

TYP

-15

MAX

—

Unit

V_(BR)GDOGate to Drain Breakdown Voltage

I_DSS

Saturated Drain Current

V_DS=3V, V_GS=0V

V_DS=3V, I_D=300µA

120

-3.5

V_GS(off)Gate to Source Cut-off Voltage

-0.3

-1.4

Output Power at

P_1dB

V_DS=3V, I_D=30mA, f=12GHz

—

dBm

1dB Gain Compression

V_DS=3V, I_D=30mA, P_in=-5dBm,

f=12GHz

G_LP

Linear Power Gain

1 Aug 2002

MITSUBISHI

(1/4)

12 3 4

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