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18TT045-F PDF预览

18TT045-F

更新时间: 2024-11-16 07:19:31
品牌 Logo 应用领域
威世 - VISHAY 整流二极管功效局域网
页数 文件大小 规格书
8页 140K
描述
High Performance Schottky Generation 5.0, 18 A

18TT045-F 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:TO-220AC
包装说明:R-PSFM-T2针数:3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.84
Is Samacsys:N其他特性:FREEWHEELING DIODE
应用:EFFICIENCY外壳连接:CATHODE
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):0.51 V
JEDEC-95代码:TO-220ACJESD-30 代码:R-PSFM-T2
最大非重复峰值正向电流:1800 A元件数量:1
相数:1端子数量:2
最高工作温度:175 °C最低工作温度:-55 °C
最大输出电流:18 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED认证状态:Not Qualified
最大重复峰值反向电压:45 V子类别:Rectifier Diodes
表面贴装:NO技术:SCHOTTKY
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

18TT045-F 数据手册

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18TT045-F  
Vishay High Power Products  
High Performance Schottky  
Generation 5.0, 18 A  
FEATURES  
• 175 °C high performance Schottky diode  
• Very low forward voltage drop  
Base  
cathode  
2
• Extremely low reverse leakage  
• Optimized VF vs. IR trade off for high efficiency  
• Increased ruggedness for reverse avalanche capability  
• RBSOA available  
• Negligible switching losses  
1
3
• Submicron trench technology  
TO-220AC  
Cathode Anode  
• Compliant to RoHS directive 2002/95/EC  
• Designed and qualified for industrial level  
APPLICATIONS  
• High efficiency SMPS  
• Automotive  
PRODUCT SUMMARY  
IF(AV)  
18 A  
45 V  
• High frequency switching  
• Output rectification  
• Reverse battery protection  
• Freewheeling  
VR  
VF at 18 A at 125 °C  
0.51 V  
• DC/DC systems  
• Increased power density systems  
MAJOR RATINGS AND CHARACTERISTICS  
SYMBOL  
VRRM  
VF  
CHARACTERISTICS  
VALUES  
45  
UNITS  
V
18 Apk, TJ = 125 °C (typical)  
Range  
0.48  
TJ  
- 55 to 175  
°C  
VOLTAGE RATINGS  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
TJ = 25 °C  
18TT045-F  
UNITS  
Maximum DC reverse voltage  
VR  
45  
V
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
50 % duty cycle at TC = 157 °C, rectangular waveform  
VALUES  
UNITS  
Maximum average forward current  
IF(AV)  
18  
Following any rated load  
condition and with rated  
RRM applied  
5 µs sine or 3 µs rect. pulse  
1800  
A
Maximum peak one cycle  
non-repetitive surge current  
IFSM  
EAS  
IAR  
10 ms sine or 6 ms rect. pulse  
390  
56  
V
Non-repetitive avalanche energy  
Repetitive avalanche current  
TJ = 25 °C, IAS = 5.5 A, L = 3.7 mH  
mJ  
A
Limited by frequency of operation and time pulse duration so that  
TJ < TJ max. IAS at TJ max. as a function of time pulse.  
See fig. 8  
I
AS at  
TJ max.  
Document Number: 94661  
Revision: 01-Apr-09  
For technical questions, contact: diodes-tech@vishay.com  
www.vishay.com  
1

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