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1812SMS-68NJLB PDF预览

1812SMS-68NJLB

更新时间： 2024-02-27 12:53:31
品牌 Logo 应用领域
威讯 - RFMD 放大器电感器测试射频感应器脉冲功率放大器
页数 文件大小 规格书
10页 871K
描述
280W GaN Wideband Pulsed Power Amplifier

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1812SMS-68NJLB 技术参数

是否无铅：不含铅是否Rohs认证：符合
生命周期：Active包装说明：1925
Reach Compliance Code：compliantECCN代码：EAR99
HTS代码：8504.50.80.00风险等级：5.7
Is Samacsys：N大小写代码：1925
构造：Flat Top型芯材料：AIR
直流电阻：0.0082 Ω标称电感 (L)：0.068 µH
电感器应用：RF INDUCTOR电感器类型：GENERAL PURPOSE INDUCTOR
JESD-609代码：e1功能数量：1
端子数量：2最高工作温度：140 °C
最低工作温度：-40 °C封装高度：4.2 mm
封装长度：4.95 mm封装形式：SMT
封装宽度：6.35 mm包装方法：TR, 7 Inch
最小质量因数（标称电感时）：100自谐振频率：0.0015 MHz
形状/尺寸说明：RECTANGULAR PACKAGE屏蔽：NO
表面贴装：YES端子面层：Tin/Silver/Copper (Sn95.5Ag4.0Cu0.5)
端子位置：DUAL ENDED端子形状：FLAT
测试频率：150 MHz容差：5%
Base Number Matches：1

1812SMS-68NJLB 数据手册

 浏览型号1812SMS-68NJLB的Datasheet PDF文件第1页浏览型号1812SMS-68NJLB的Datasheet PDF文件第3页浏览型号1812SMS-68NJLB的Datasheet PDF文件第4页浏览型号1812SMS-68NJLB的Datasheet PDF文件第5页浏览型号1812SMS-68NJLB的Datasheet PDF文件第6页浏览型号1812SMS-68NJLB的Datasheet PDF文件第7页 
RFHA1025  
Absolute Maximum Ratings  
Parameter  
Rating  
150  
Unit  
V
Caution! ESD sensitive device.  
Exceeding any one or a combination of the Absolute Maximum Rating conditions may  
cause permanent damage to the device. Extended application of Absolute Maximum  
Rating conditions to the device may reduce device reliability. Specified typical perfor-  
mance or functional operation of the device under Absolute Maximum Rating condi-  
tions is not implied.  
Drain Voltage (V )  
D
Gate Voltage (V )  
-8 to 2  
155  
V
G
Gate Current (I )  
mA  
G
The information in this publication is believed to be accurate and reliable. However, no  
responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any  
infringement of patents, or other rights of third parties, resulting from its use. No  
license is granted by implication or otherwise under any patent or patent rights of  
RFMD. RFMD reserves the right to change component circuitry, recommended appli-  
cation circuitry and specifications at any time without prior notice.  
Ruggedness (VSWR)  
10:1  
Storage Temperature Range  
-55 to +125  
-40 to +85  
°C  
°C  
Operating Temperature Range (T )  
C
RFMD Green: RoHS compliant per EU Directive 2002/95/EC, halogen free  
per IEC 61249-2-21, < 1000ppm each of antimony trioxide in polymeric  
materials and red phosphorus as a flame retardant, and <2% antimony in  
solder.  
Operating Junction Temperature (T )  
250  
°C  
J
Human Body Model  
Class 1B  
MTTF (T < 200°C, 95% Confidence Limits)*  
1.8E + 07  
Hours  
Hours  
°C/W  
J
MTTF (T < 250°C, 95% Confidence Limits)*  
1.1E + 05  
J
Thermal Resistance, R (junction to case):  
TH  
0.90  
0.18  
0.34  
T = 85°C, DC bias only  
C
T = 85°C, 100s pulse, 10% duty cycle  
C
T = 85°C, 1ms pulse, 10% duty cycle  
C
* MTTF - median time to failure for wear-out failure mode (30% I  
degradation) which is determined by the technology process reliability.  
DSS  
Refer to product qualification report for FIT(random) failure rate.  
Operation of this device beyond any one of these limits may cause permanent damage. For reliable continuous operation, the device  
voltage and current must not exceed the maximum operating values.  
Bias Conditions should also satisfy the following expression: P  
< (T - T )/R J - C and T = T  
DISS  
J C TH C CASE  
Specification  
Typ.  
Parameter  
Unit  
Condition  
Min.  
Max.  
Recommended Operating Conditions  
Drain Voltage (V  
)
50  
-3  
V
V
DSQ  
Gate Voltage (V  
)
-8  
-2  
GSQ  
Drain Bias Current  
440  
mA  
Frequency of Operation  
960  
1215  
MHz  
DC Functional Test  
I
– Gate Leakage  
– Drain Leakage  
– Threshold Voltage  
2
mA  
mA  
V
V
= -8V, V = 0V  
G (OFF)  
D (OFF)  
G
G
D
G
D
I
2.5  
V
V
V
= -8V, V = 50V  
D
V
V
-3.5  
= 50V, I = 40mA  
D
GS (TH)  
– Drain Voltage at High  
0.28  
V
= 0V, I = 1.5A  
D
DS (ON)  
Current  
[1], [2]  
f = 960MHz, P = 28dBm  
RF Functional Test  
Small Signal Gain  
Power Gain  
17  
14.2  
-7.5  
55.2  
55  
dB  
dB  
IN  
13  
f = 960MHz, P = 41dBm  
IN  
Input Return Loss  
Output Power  
-5  
-5  
dB  
54  
50  
dBm  
%
Drain Efficiency  
Small Signal Gain  
Power Gain  
17  
dB  
f = 1215MHz, P = 28dBm  
IN  
13  
13.6  
-7  
dB  
f = 1215MHz, P = 41dBm  
IN  
Input Return Loss  
Output Power  
dB  
54  
50  
54.6  
59  
dBm  
%
Drain Efficiency  
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical  
support, contact RFMD at (+1) 336-678-5570 or customerservice@rfmd.com.  
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