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16F60S02 PDF预览

16F60S02

更新时间: 2024-02-20 00:49:09
品牌 Logo 应用领域
威世 - VISHAY 快速恢复二极管
页数 文件大小 规格书
13页 2067K
描述
Rectifier Diode, 1 Phase, 1 Element, 16A, 600V V(RRM), Silicon, DO-203AA, DO-4, 1 PIN

16F60S02 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:DO-4
包装说明:DO-4, 1 PIN针数:1
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.4
其他特性:FREE WHEELING DIODE应用:FAST RECOVERY
外壳连接:CATHODE配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
JEDEC-95代码:DO-203AAJESD-30 代码:O-MUPM-D1
最大非重复峰值正向电流:190 A元件数量:1
相数:1端子数量:1
最大输出电流:16 A封装主体材料:METAL
封装形状:ROUND封装形式:POST/STUD MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED认证状态:Not Qualified
最大重复峰值反向电压:600 V最大反向恢复时间:0.2 µs
表面贴装:NO端子形式:SOLDER LUG
端子位置:UPPER处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

16F60S02 数据手册

 浏览型号16F60S02的Datasheet PDF文件第1页浏览型号16F60S02的Datasheet PDF文件第3页浏览型号16F60S02的Datasheet PDF文件第4页浏览型号16F60S02的Datasheet PDF文件第5页浏览型号16F60S02的Datasheet PDF文件第6页浏览型号16F60S02的Datasheet PDF文件第7页 
1N3879(R), 1N3889(R), 6/12/16FL(R) Series  
Fast Recovery Diodes  
(Stud Version), 6/12/16 A  
Vishay High Power Products  
ELECTRICAL SPECIFICATIONS  
VOLTAGE RATINGS  
VRRM, MAXIMUM  
REPETITIVE PEAK AND  
OFF-STATE VOLTAGE  
V
VRSM, MAXIMUM  
NON-REPETITIVE  
PEAK VOLTAGE  
V
I
RRM MAXIMUM  
AT TJ = 25 °C  
µA  
I
RRM MAXIMUM  
IRRM MAXIMUM  
AT TJ = 150 °C  
mA  
TYPE  
NUMBER  
VOLTAGE  
CODE  
AT TJ = 100 °C  
mA  
50  
100  
200  
300  
400  
50  
75  
150  
250  
350  
450  
75  
1N3879.  
1N3880.  
1N3881.  
1N3882.  
-
-
15 (1)  
1.0 (1)  
3.0 (1)  
1N3883.  
1N3889.  
1N3890.  
1N3891.  
100  
200  
300  
400  
50  
150  
250  
350  
450  
75  
25 (1)  
3.0 (1)  
5.0 (1)  
1N3892.  
1N3893.  
5
10  
20  
40  
60  
80  
100  
100  
200  
400  
600  
800  
1000  
150  
275  
500  
725  
950  
1250  
6FL..  
12FL..  
16FL..  
50  
-
6.0  
Note  
(1)  
JEDEC registered values  
FORWARD CONDUCTION  
1N3889.  
1N3879.  
1N3883.  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
6FL.. 1N3893. 16FL.. UNITS  
12FL..  
6 (1)  
100  
9.5  
12 (1)  
100  
19  
6
16  
100  
25  
A
Maximum average forward current  
at case temperature  
180° conduction, half sine wave  
DC  
IF(AV)  
100  
9.5  
130  
135  
110  
115  
86  
°C  
Maximum RMS current  
IF(RMS)  
t = 10 ms  
t = 8.3 ms  
t = 10 ms  
t = 8.3 ms  
t = 10 ms  
t = 8.3 ms  
t = 10 ms  
t = 8.3 ms  
85  
90  
72  
170  
180  
145  
215  
225  
180  
190  
230  
210  
160  
150  
2290  
1.4  
No voltage  
reapplied  
A
Maximum peak, one-cycle  
non-repetitive forward current  
IFSM  
100 % VRRM  
reapplied  
Sinusoidal  
half wave,  
initial  
75 (1)  
36  
150 (1)  
145  
No voltage  
reapplied  
TJ = 150 °C  
33  
26  
78  
130  
103  
94  
Maximum I2t for fusing  
I2t  
A2s  
60  
100 % VRRM  
reapplied  
23  
55  
Maximum I2t for fusing  
I2t  
t = 0.1 to 10 ms, no voltage reapplied  
TJ = 25 °C; IF = Rated IF(AV) (DC)  
363  
856  
1.4  
1.5  
1452  
A2s  
V
1.4 (1)  
1.5 (1)  
1.4 (1)  
1.5 (1)  
Maximum forward voltage drop  
VFM  
T
C = 100 °C; IFM = π x rated IF(AV)  
1.5  
V
Note  
(1)  
JEDEC registered values  
www.vishay.com  
2
For technical questions, contact: ind-modules@vishay.com  
Document Number: 93138  
Revision: 26-Sep-08  

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