5秒后页面跳转
16F60MS05 PDF预览

16F60MS05

更新时间: 2024-02-20 17:02:30
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
13页 2067K
描述
Rectifier Diode, 1 Phase, 1 Element, 16A, 600V V(RRM), Silicon, DO-203AA, DO-4, 1 PIN

16F60MS05 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Active零件包装代码:DO-4
包装说明:DO-4, 1 PIN针数:1
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.48
其他特性:FREE WHEELING DIODE应用:FAST RECOVERY
外壳连接:CATHODE配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
JEDEC-95代码:DO-203AAJESD-30 代码:O-MUPM-D1
JESD-609代码:e0最大非重复峰值正向电流:225 A
元件数量:1相数:1
端子数量:1最高工作温度:150 °C
最低工作温度:-65 °C最大输出电流:16 A
封装主体材料:METAL封装形状:ROUND
封装形式:POST/STUD MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
认证状态:Not Qualified最大重复峰值反向电压:600 V
最大反向恢复时间:0.5 µs表面贴装:NO
端子面层:TIN LEAD端子形式:SOLDER LUG
端子位置:UPPER处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

16F60MS05 数据手册

 浏览型号16F60MS05的Datasheet PDF文件第1页浏览型号16F60MS05的Datasheet PDF文件第2页浏览型号16F60MS05的Datasheet PDF文件第4页浏览型号16F60MS05的Datasheet PDF文件第5页浏览型号16F60MS05的Datasheet PDF文件第6页浏览型号16F60MS05的Datasheet PDF文件第7页 
1N3879(R), 1N3889(R), 6/12/16FL(R) Series  
Fast Recovery Diodes  
(Stud Version), 6/12/16 A  
Vishay High Power Products  
RECOVERY CHARACTERISTICS  
6FL..  
12FL..  
16FL..  
1N3879. 1N3889.  
1N3883. 1N3893.  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
UNITS  
S02  
S05  
TJ = 25 °C, IF = 1 A to VR = 30 V,  
dIF/dt = 100 A/µs  
150  
300 (1)  
4 (1)  
150  
300 (1)  
5 (1)  
-
-
IFM  
Maximum reverse  
recovery time  
trr  
IRM(REC)  
Qrr  
ns  
-
trr  
TJ = 25 °C, dIF/dt = 25 A/µs,  
200  
500  
I
FM = π x rated IF(AV)  
t
dir  
dt  
Qrr  
Maximum peak  
recovery current  
IFM = π x rated IF(AV)  
-
IRM(REC)  
TJ = 25 °C, IF = 1 A to VR = 30 V,  
dIF/dt = 100 A/µs  
400  
350  
-
-
-
-
Maximum reverse  
recovery charge  
nC  
TJ = 25 °C, dIF/dt = 25 A/µs,  
400  
400  
I
FM = π x rated IF(AV)  
Note  
(1)  
JEDEC registered values  
THERMAL AND MECHANICAL SPECIFICATIONS  
1N3879.  
1N3883.  
6FL..  
1N3889.  
1N3893.  
12FL..  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
16FL..  
UNITS  
Maximum junction operating  
temperature range  
TJ  
- 65 to 150  
- 65 to 175  
2.0  
°C  
Maximum storage temperature range  
TStg  
RthJC  
Maximum thermal resistance,  
junction to case  
DC operation  
2.5  
1.6  
°C/W  
Maximum thermal resistance,  
case to heatsink  
Mounting surface, smooth,  
flat and greased  
RthCS  
0.5  
1.5 + 0 - 10 %  
(13)  
Not lubricated threads  
Lubricated threads  
N · m  
(lbf · in)  
Allowable mounting torque  
1.2 + 0 - 10 %  
(10)  
7
g
Approximate weight  
Case style  
0.25  
oz.  
JEDEC  
DO-203AA (DO-4)  
Document Number: 93138  
Revision: 26-Sep-08  
For technical questions, contact: ind-modules@vishay.com  
www.vishay.com  
3

与16F60MS05相关器件

型号 品牌 描述 获取价格 数据表
16F60MS05PBF INFINEON Rectifier Diode, 1 Phase, 1 Element, 16A, 600V V(RRM), Silicon, DO-203AA, DO-4, 1 PIN

获取价格

16F60PBF INFINEON Rectifier Diode, 1 Phase, 1 Element, 16A, 600V V(RRM), Silicon, DO-203AA, ROHS COMPLIANT,

获取价格

16F60S02 VISHAY Rectifier Diode, 1 Phase, 1 Element, 16A, 600V V(RRM), Silicon, DO-203AA, DO-4, 1 PIN

获取价格

16F60S05 VISHAY Rectifier Diode, 1 Phase, 1 Element, 16A, 600V V(RRM), Silicon, DO-203AA, DO-4, 1 PIN

获取价格

16F60S05PBF INFINEON Rectifier Diode, 1 Phase, 1 Element, 16A, 600V V(RRM), Silicon, DO-203AA, DO-4, 1 PIN

获取价格

16F6144 ETC TRANSISTOR MOSFET D-PAK

获取价格