Datasheet > 16F10MS05

16F10MS05

更新时间： 2024-02-18 04:32:38

品牌	Logo	应用领域
威世 - VISHAY		快速恢复二极管
页数	文件大小	规格书
13页	2067K
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数据手册

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16F10MS05 数据手册

1N3879(R), 1N3889(R), 6/12/16FL(R) Series

Fast Recovery Diodes

(Stud Version), 6/12/16 A

Vishay High Power Products

ΔR_thJCCONDUCTION

1N3879.

1N3883.

6FL..

1N3889.

1N3893.

12FL..

1N3879.

1N3883.

6FL..

1N3889.

1N3893.

12FL..

16FL..

CONDUCTION ANGLE

TEST CONDITIONS

UNITS

SINUSOIDAL CONDUCTION

RECTANGULAR CONDUCTION

180°

120°

60°

0.58

0.60

1.28

2.20

0.46

0.48

1.02

1.76

0.37

0.39

0.82

1.41

0.33

0.58

1.28

2.20

0.26

0.46

1.02

1.76

0.21

0.37

0.82

1.41

T_J= 150 °C

K/W

30°

Note

• The table above shows the increment of thermal resistance R_thJCwhen devices operate at different conduction angles than DC

Fig. 1 - Average Forward Current vs.

Maximum Allowable Case Temperature,

1N3879 and 6FL Series

Fig. 3 - Average Forward Current vs.

Maximum Allowable Case Temperature, 16FL Series

Fig. 2 - Average Forward Current vs.

Maximum Allowable Case Temperature,

1N3889 and 12FL Series

Fig. 4 - Reverse Recovery Time Test Waveform

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For technical questions, contact: ind-modules@vishay.com

Document Number: 93138

Revision: 26-Sep-08

1 2 345 6 7...13

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