Datasheet > 16F160

16F160

更新时间： 2024-02-21 19:51:15

品牌	Logo	应用领域
NAINA		二极管
页数	文件大小	规格书
2页	113K
描述
Standard Recovery Diodes (Stud Version)

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中文翻译

获取价格

数据手册

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16F160 数据手册

16NS(R)

Naina Semiconductor Ltd.

Standard Recovery Diodes (Stud Version)

Features

•

Diffused Series

Industrial grade

Available in Normal and Reverse polarity

Metric and UNF thread type

Electrical Specifications (T_E= 25⁰C, unless otherwise noted)

Symbol

Parameters

Values Units

Maximum avg. forward current @ T_E=

150^OC

I_F(AV)

1.3

300

Maximum peak forward voltage drop

@ rated I_F(AV)

V_FM

I_FSM

I_FRM

I²t

Maximum peak one cycle (non-rep)

surge current @ 10 msec

Maximum peak repetitive surge

current

Maximum I²t rating (non-rep) for 5 to

450

A²sec

10 msec

DO-203AA (DO-4)

Electrical Ratings (T_E= 25⁰C, unless otherwise noted)

_RRM,Maximum

V_R(RMS),Maximum

_R(AV),Maximum

avg. reverse

V_R,Maximum

DC blocking

voltage

Recommended RMS

working voltage

(V)

repetitive peak

reverse voltage

(V)

RMS reverse

voltage

(V)

Type

number

Voltage

Code

leakage current

(µA)

(V)

100

200

140

280

420

560

700

840

980

1120

100

200

400

160

240

320

400

480

560

640

600

16NS(R)

800

100

120

140

160

1000

1200

1400

1600

1000

1200

1400

1600

D-95, Sector 63, Noida – 201301, India

•

Tel: 0120-4205450

•

Fax: 0120-4273653

sales@nainasemi.com

•

www.nainasemi.com

中文翻译

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