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16CTQ080PBF PDF预览

16CTQ080PBF

更新时间: 2024-11-23 06:15:55
品牌 Logo 应用领域
威世 - VISHAY 整流二极管局域网
页数 文件大小 规格书
6页 113K
描述
Schottky Rectifier, 2 x 8 A

16CTQ080PBF 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:TO-220AB
包装说明:R-PSFM-T3针数:3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:7.09
Is Samacsys:N其他特性:FREE WHEELING DIODE, HIGH RELIABILITY
应用:HIGH POWER外壳连接:CATHODE
配置:COMMON CATHODE, 2 ELEMENTS二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):0.58 V
JEDEC-95代码:TO-220ABJESD-30 代码:R-PSFM-T3
JESD-609代码:e3最大非重复峰值正向电流:850 A
元件数量:2相数:1
端子数量:3最高工作温度:175 °C
最低工作温度:-55 °C最大输出电流:8 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
认证状态:Not Qualified最大重复峰值反向电压:80 V
子类别:Rectifier Diodes表面贴装:NO
技术:SCHOTTKY端子面层:MATTE TIN (SN) - WITH NICKEL (NI) BARRIER
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

16CTQ080PBF 数据手册

 浏览型号16CTQ080PBF的Datasheet PDF文件第2页浏览型号16CTQ080PBF的Datasheet PDF文件第3页浏览型号16CTQ080PBF的Datasheet PDF文件第4页浏览型号16CTQ080PBF的Datasheet PDF文件第5页浏览型号16CTQ080PBF的Datasheet PDF文件第6页 
16CTQ... Series  
Vishay High Power Products  
Schottky Rectifier, 2 x 8 A  
FEATURES  
• 175 °C TJ operation  
Base  
common  
cathode  
2
• Center tap configuration  
• Low forward voltage drop  
• High frequency operation  
• High purity, high temperature epoxy encapsulation for  
enhanced mechanical strength and moisture resistance  
Anode  
Anode  
2
• Guard ring for enhanced ruggedness and long term  
reliability  
Common  
cathode  
1
3
TO-220AB  
• Designed and qualified for industrial level  
DESCRIPTION  
This center tap Schottky rectifier series has been optimized  
for low reverse leakage at high temperature. The proprietary  
barrier technology allows for reliable operation up to 175 °C  
junction temperature. Typical applications are in switching  
power supplies, converters, freewheeling diodes, and  
reverse battery protection.  
PRODUCT SUMMARY  
IF(AV)  
2 x 8 A  
VR  
60 to 100 V  
MAJOR RATINGS AND CHARACTERISTICS  
SYMBOL  
IF(AV)  
VRRM  
IFSM  
CHARACTERISTICS  
VALUES  
16  
UNITS  
Rectangular waveform  
A
V
60 to 100  
850  
tp = 5 µs sine  
A
VF  
8 Apk, TJ = 125 °C (per leg)  
Range  
0.58  
V
TJ  
- 55 to 175  
°C  
VOLTAGE RATINGS  
PARAMETER  
SYMBOL  
VR  
16CTQ060  
60  
16CTQ080  
16CTQ100  
UNITS  
Maximum DC reverse voltage  
Maximum working peak reverse voltage  
80  
100  
V
VRWM  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
VALUES  
UNITS  
Maximum average  
forward current  
See fig. 5  
per leg  
8
IF(AV)  
50 % duty cycle at TC = 148 °C, rectangular waveform  
A
per device  
16  
Maximum peak one cycle non-repetitive  
surge current per leg  
See fig. 7  
Following any rated load  
condition and with rated  
VRRM applied  
5 µs sine or 3 µs rect. pulse  
10 ms sine or 6 ms rect. pulse  
850  
IFSM  
A
275  
Non-repetitive avalanche energy per leg  
Repetitive avalanche current per leg  
EAS  
IAR  
TJ = 25 °C, IAS = 0.50 A, L = 60 mH  
7.50  
mJ  
A
Current decaying linearly to zero in 1 µs  
Frequency limited by TJ maximum VA = 1.5 x VR typical  
0.50  
Document Number: 93241  
Revision: 22-Aug-08  
For technical questions, contact: diodes-tech@vishay.com  
www.vishay.com  
1

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