Datasheet > 15N25G-TF1-R

15N25G-TF1-R

更新时间： 2022-02-26 11:10:59

品牌	Logo	应用领域
友顺 - UTC		/
页数	文件大小	规格书
3页	151K
描述
N-CHANNEL POWER MOSFET

阅读下载

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

15N25G-TF1-R 数据手册

15N25-P

Preliminary

Power MOSFET



ABSOLUTE MAXIMUM RATINGS (unless otherwise specified)

PARAMETER

SYMBOL

V_DSS

V_GSS

I_D

RATINGS

250

UNIT

Drain-Source Voltage

Gate-Source Voltage

±30

Continuous

Pulsed

Continuous Drain Current

I_DM

Single Pulsed Avalanche Current

Single Pulsed Avalanche Energy

Power Dissipation

I_AS

E_AS

P_D

340

°C

Junction Temperature

T_J

+150

-55 ~ +150

Storage Temperature

T_STG

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.



THERMAL DATA

PARAMETER

SYMBOL

θ_JA

RATINGS

110

UNIT

°C/W

Junction to Ambient

Junction to Case

θ_JC

1.5



ELECTRICAL CHARACTERISTICS

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

Drain-Source Leakage Current

BV_DSS

I_DSS

I_D=250µA, V_GS=0V

V_DS=250V, V_GS=0V

_GS=+30V, V_DS=0V

250

µA

Forward

Reverse

+100 nA

-100 nA

Gate-Source Leakage Current

I_GSS

V_GS=-30V, V_DS=0V

ON CHARACTERISTICS

Gate Threshold Voltage

V_GS(TH)

R_DS(ON)

V_DS=V_GS, I_D=250µA

V_GS=10V, I_D=7.5A

Static Drain-Source On-State Resistance

DYNAMIC PARAMETERS

Input Capacitance

0.18 0.25

ꢀ

C_ISS

C_OSS

C_RSS

830 1080 pF

200 260 pF

Output Capacitance

V_GS=0V, V_DS=25V, f=1.0MHz

Reverse Transfer Capacitance

SWITCHING PARAMETERS

Total Gate Charge

Q_G

Q_GS

Q_GD

t_D(ON)

t_R

Gate to Source Charge

Gate to Drain Charge

Turn-ON Delay Time

Rise Time

V_GS=10V, V_DD=120V, I_D=18A

6.7

_DD=30V, I_D=1A, R_G=25ꢀ,

_GS=10V, R_L=30 ꢀ

Turn-OFF Delay Time

Fall-Time

t_D(OFF)

t_F

314 332 ns

SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS

Maximum Body-Diode Continuous

Current

I_S

Maximum Body-Diode Pulsed Current

Drain-Source Diode Forward Voltage

I_SM

V_SD

I_S=15A, V_GS=0V

1.5

UNISONIC TECHNOLOGIES CO., LTD

2 of 3

QW-R502-A24.a

www.unisonic.com.tw

123

下载PDF

与15N25G-TF1-R相关器件

型号	品牌	描述	获取价格	数据表
15N25G-TF1-T	UTC	N-CHANNEL POWER MOSFET	获取价格
15N25L-TF1-R	UTC	N-CHANNEL POWER MOSFET	获取价格
15N25L-TF1-T	UTC	N-CHANNEL POWER MOSFET	获取价格
15N25-P	UTC	N-CHANNEL POWER MOSFET	获取价格
15N30	LGE	场效应晶体管	获取价格
15N30F	LGE	场效应晶体管	获取价格