Datasheet > 15N30F

15N30F

更新时间： 2024-10-31 14:53:23

品牌	Logo	应用领域
鲁光 - LGE		晶体管场效应晶体管
页数	文件大小	规格书
3页	681K
描述
场效应晶体管

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数据手册

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15N30F 数据手册

15N30F

N-Channel Power MOSFET

FEATURES



RDS(on) = 240 mꢀ (Typ.) @ VGS = 10 V, ID = 7.5 A

Low Gate Charge (Typ. 28 nC)

Low Crss (Typ. 17 pF)

100% Avalanche Tested

Improved dv/dt Capability

RoHS Compliant

APPLICATIONS



Lighting



Uninterruptible Power Supply

ITO-220AB

MOSFET Maximum Ratings TC = 25oC unless otherwise noted*

Value

Symbol

Parameter

Unit

V_DS

Drain-Source Voltage

300

Gate -Source Voltage

V_GS

±30

Drain Current Continuous at T_C=25℃

Continuous at T_C=100℃

I_D

Drain Current(pulsed)Note1

I_DM

731

Single Pulsed Avalanche Energy

(Note 2)

E_AS

Repetitive Avalanche Energy

(Note 1)

E_AR

IAR

Avalanche Current

(Note 1)

Peak Diode Recovery dv/dt

(Note 3)

dv/dt

P_D

V/ns

170

Power Dissipation

T_C=25℃

Derate above 25°C

1.45

W/℃

Thermal Resistance,Junction-to-Ambient

Thermal Resistance,Junction-to-Case

Junction and StorageTemperature Range

R_θJA

62.5

0.7

℃/W

R_θJC

T_jT_stg

-55 to +150

℃

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mail:lge@lgesemi.com

Revision:20170701-P1

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