15N30
N-Channel Power MOSFET
FEATURES
RDS(on) = 240 mꢀ (Typ.) @ VGS = 10 V, ID = 7.5 A
Low Gate Charge (Typ. 28 nC)
Low Crss (Typ. 17 pF)
100% Avalanche Tested
Improved dv/dt Capability
RoHS Compliant
APPLICATIONS
Lighting
Uninterruptible Power Supply
TO-220AB
MOSFET Maximum Ratings TC = 25oC unless otherwise noted*
Value
Symbol
Parameter
Unit
VDS
Drain-Source Voltage
300
V
Gate -Source Voltage
VGS
±30
V
A
15
9
Drain Current Continuous at TC=25℃
Continuous at TC=100℃
ID
Drain Current(pulsed)Note1
IDM
60
731
17
A
mJ
mJ
A
Single Pulsed Avalanche Energy
(Note 2)
EAS
Repetitive Avalanche Energy
(Note 1)
EAR
IAR
Avalanche Current
(Note 1)
15
15
Peak Diode Recovery dv/dt
(Note 3)
dv/dt
PD
V/ns
170
W
Power Dissipation
TC=25℃
Derate above 25°C
1.45
W/℃
Thermal Resistance,Junction-to-Ambient
Thermal Resistance,Junction-to-Case
Junction and StorageTemperature Range
RθJA
62.5
0.7
℃/W
℃/W
RθJC
Tj Tstg
-55 to +150
℃
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Revision:20170701-P1