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15N20L-TN3-T PDF预览

15N20L-TN3-T

更新时间: 2022-09-11 07:15:38
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友顺 - UTC /
页数 文件大小 规格书
3页 131K
描述
15A, 200V N-CHANNEL POWER MOSFET

15N20L-TN3-T 数据手册

 浏览型号15N20L-TN3-T的Datasheet PDF文件第1页浏览型号15N20L-TN3-T的Datasheet PDF文件第3页 
15N20  
Preliminary  
Power MOSFET  
„
ABSOLUTE MAXIMUM RATINGS (unless otherwise specified)  
PARAMETER  
SYMBOL  
VDSS  
VGSS  
ID  
RATINGS  
200  
UNIT  
V
Drain-Source Voltage  
Gate-Source Voltage  
±30  
V
Continuous  
Pulsed  
15  
A
Continuous Drain Current  
IDM  
60  
A
Single Pulsed Avalanche Current  
Single Pulsed Avalanche Energy  
Power Dissipation  
IAS  
15  
A
EAS  
PD  
340  
mJ  
W
°C  
°C  
83  
Junction Temperature  
TJ  
+150  
-55 ~ +150  
Storage Temperature  
TSTG  
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.  
Absolute maximum ratings are stress ratings only and functional device operation is not implied.  
„
THERMAL DATA  
PARAMETER  
SYMBOL  
θJA  
RATINGS  
110  
UNIT  
°C/W  
°C/W  
Junction to Ambient  
Junction to Case  
θJC  
1.5  
„
ELECTRICAL CHARACTERISTICS  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
MIN TYP MAX UNIT  
OFF CHARACTERISTICS  
Drain-Source Breakdown Voltage  
Drain-Source Leakage Current  
BVDSS  
IDSS  
ID=250µA, VGS=0V  
VDS=200V, VGS=0V  
GS=+30V, VDS=0V  
200  
V
1
µA  
Forward  
Reverse  
V
+100 nA  
-100 nA  
Gate-Source Leakage Current  
IGSS  
VGS=-30V, VDS=0V  
ON CHARACTERISTICS  
Gate Threshold Voltage  
VGS(TH)  
RDS(ON)  
VDS=VGS, ID=250µA  
VGS=10V, ID=7.5A  
3
5
V
Static Drain-Source On-State Resistance  
DYNAMIC PARAMETERS  
Input Capacitance  
0.12 0.14  
CISS  
COSS  
CRSS  
830 1080 pF  
200 260 pF  
Output Capacitance  
VGS=0V, VDS=25V, f=1.0MHz  
Reverse Transfer Capacitance  
SWITCHING PARAMETERS  
Total Gate Charge  
25  
33  
pF  
QG  
QGS  
QGD  
tD(ON)  
tR  
20  
5.6  
10  
16  
26 nC  
nC  
Gate to Source Charge  
Gate to Drain Charge  
Turn-ON Delay Time  
Rise Time  
VGS=10V, VDD=120V, ID=18A  
nC  
40  
ns  
133 275 ns  
38 85 ns  
62 135 ns  
VDD=30V, ID=1A, RG=25,  
GS=10V, RL=30 ꢀ  
V
Turn-OFF Delay Time  
Fall-Time  
tD(OFF)  
tF  
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS  
Maximum Body-Diode Continuous Current  
Maximum Body-Diode Pulsed Current  
Drain-Source Diode Forward Voltage  
IS  
15  
60  
A
A
V
ISM  
VSD  
IS=15A, VGS=0V  
1.5  
UNISONIC TECHNOLOGIES CO., LTD  
2 of 3  
QW-R502-717.a  
www.unisonic.com.tw  

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