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15102GODE3 PDF预览

15102GODE3

更新时间: 2024-02-20 15:11:19
品牌 Logo 应用领域
美高森美 - MICROSEMI 栅极
页数 文件大小 规格书
3页 173K
描述
Silicon Controlled Rectifier, 235A I(T)RMS, 200V V(RRM), 1 Element

15102GODE3 技术参数

生命周期:Active包装说明:POST/STUD MOUNT, O-MUPM-D2
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.30.00.80风险等级:5.65
配置:SINGLE最大直流栅极触发电流:150 mA
JESD-30 代码:O-MUPM-D2元件数量:1
端子数量:2最高工作温度:125 °C
最低工作温度:-65 °C封装主体材料:METAL
封装形状:ROUND封装形式:POST/STUD MOUNT
最大均方根通态电流:235 A重复峰值反向电压:200 V
表面贴装:NO端子形式:SOLDER LUG
端子位置:UPPER触发设备类型:SCR
Base Number Matches:1

15102GODE3 数据手册

 浏览型号15102GODE3的Datasheet PDF文件第2页浏览型号15102GODE3的Datasheet PDF文件第3页 

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