Datasheet > 150UR160

150UR160

更新时间： 2024-11-16 05:57:47

品牌	Logo	应用领域
NAINA		二极管
页数	文件大小	规格书
1页	84K
描述
SILICON POWER DIODE

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中文翻译

获取价格

数据手册

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150UR160 数据手册

150U/150UR

NAINA

SILICON POWER DIODE

DO - 8

FEATURES

•

Diffused Series

Available in Normal & Reverse Polarity

Industrial Grade

Available In Avalanche Characteristic

ELECTRICALSPECIFICATIONS

I_F

Maximum Average Forward

Current Te=125⁰C

150A

1.4V

V_FM

I_FSM

I_FRM

Maximum peak forward

voltage drop @ Rated IF(AV)

Maximum peak one cycle

(non-rep) surge current 10 m sec

Maximum peak repetitive

surge current

3000A

750A

I²t

Maximum I²t rating (non-rep.) for

5 to 10 msec.

45,000 A Sec

THERMALMECHANICALSPECIFICATIONS

θ_JC

Tstg

Maximum thermal resistance Junction to case

0.25⁰C/W

Operating Junction Temp.

Storage temperature

Mounting torque

(Non-lubricated threads)

Approx, weight

-65⁰C to 150⁰C

-65⁰C to 200⁰C

2.0 M-kg min,

3.0 M-kg max

150 gms.

ELECTRICALRATINGS

TYPE

V_RRM

150U/150UR

Max. repetitive peak reverse

voltage (v)

100

120

140

160

100

200 400 600

140 280 420

200 400 600

800 1000

1200 1400 1600

V_R(RMS) Max. R.M.S. reverse voltage (V) 70

560

700

840

980 1120

V_R

Max. D.C. Blocking Voltage (V) 100

800 1000

1200 1400 1600

Recommended R.M.S. working

160 240

320

200

400

200

480

200

560

200

640

200

Voltage(v)

I_R(AV)

Max. Average reverse leakage

200

200 200 200

current @ VRRM Tc 25⁰C (uA)

NAINA SEMICONDUCTOR LTD.,

D-95,SECTOR 63, NOIDA(INDIA)

e-mail:sales@nainasemi.com, web site: www.nainasemi.com

中文翻译

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