Datasheet > 150AQ045TR

150AQ045TR

更新时间： 2024-02-08 11:36:13

品牌	Logo	应用领域
威世 - VISHAY		电池
页数	文件大小	规格书
6页	116K
描述
Photovoltaic Solar Cell Protection Schottky Rectifier, 15 A

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150AQ045TR 数据手册

VS-150SQ... Series

Vishay Semiconductors

Photovoltaic Solar Cell Protection Schottky Rectifier, 15 A

FEATURES

• 150 °C T_Joperation

• Low forward voltage drop

• High frequency operation

• Guard ring for enhanced ruggedness and long

term reliability

Cathode

Anode

• High purity, high temperature epoxy encapsulation for

enhanced mechanical strength and moisture resistance

• Lead (Pb)-free plating

DO-204AR

• Compliant to RoHS directive 2002/95/EC

• Designed and qualified for industrial level

DESCRIPTION

The VS-150SQ... axial leaded Schottky rectifier series has

been optimized for very low forward voltage drop, with

moderate leakage. The proprietary barrier technology allows

for reliable operation up to 150 °C junction temperature.

Typical applications are in switching power supplies,

converters, freewheeling diodes, and reverse battery

protection.

PRODUCT SUMMARY

I_F(AV)

15 A

30 V to 45 V

V_R

T_J 200 °C for use in solar cell box as a bypass diode for

protection, using DC forward current without reverse bias.

MAJOR RATINGS AND CHARACTERISTICS

SYMBOL

I_F(AV)

V_RRM

I_FSM

CHARACTERISTICS

VALUES

UNITS

30 to 45

2150

t_p= 5 μs sine

15 Apk, T_J= 125 °C

Range ⁽¹⁾

V_F

0.48

T_J

- 55 to 150

°C

Note

(1)

T_J 200 °C for DC current without reverse voltage

VOLTAGE RATINGS

PARAMETER

SYMBOL

V_R

VS-150SQ030 VS-150SQ035 VS-150SQ040 VS-150SQ045

UNITS

Maximum DC reverse voltage

Maximum working peak reverse voltage

V_RWM

ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

TEST CONDITIONS

VALUES

UNITS

Maximum average forward current

See fig. 5

I_F(AV)

For DC solar application T_C= 172 °C (T_J= 200 °C)

Maximum peak one cycle

non-repetitive surge current

See fig. 7

Followinganyratedload

condition and with rated

_RRMapplied

5 μs sine or 3 μs rect. pulse

2150

I_FSM

10 ms sine or 6 ms rect. pulse

340

Non-repetitive avalanche energy

Repetitive avalanche current

E_AS

I_AR

T_J= 25 °C, I_AS= 1.8 A, L = 7.4 mH

Current decaying linearly to zero in 1 μs

Frequency limited by, T_Jmaximum V_A= 1.5 x V_Rtypical

1.8

Document Number: 93098

Revision: 15-Jun-10

For technical questions within your region, please contact one of the following:

DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

www.vishay.com

12 3 4 5 6

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