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150AQ045TR

更新时间： 2024-11-16 12:20:31
品牌 Logo 应用领域
威世 - VISHAY 电池
页数 文件大小 规格书
6页 116K
描述
Photovoltaic Solar Cell Protection Schottky Rectifier, 15 A

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150AQ045TR 数据手册

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VS-150SQ... Series  
Vishay Semiconductors  
Photovoltaic Solar Cell Protection Schottky Rectifier, 15 A  
FEATURES  
• 150 °C TJ operation  
• Low forward voltage drop  
• High frequency operation  
• Guard ring for enhanced ruggedness and long  
term reliability  
Cathode  
Anode  
• High purity, high temperature epoxy encapsulation for  
enhanced mechanical strength and moisture resistance  
• Lead (Pb)-free plating  
DO-204AR  
• Compliant to RoHS directive 2002/95/EC  
• Designed and qualified for industrial level  
DESCRIPTION  
The VS-150SQ... axial leaded Schottky rectifier series has  
been optimized for very low forward voltage drop, with  
moderate leakage. The proprietary barrier technology allows  
for reliable operation up to 150 °C junction temperature.  
Typical applications are in switching power supplies,  
converters, freewheeling diodes, and reverse battery  
protection.  
PRODUCT SUMMARY  
IF(AV)  
15 A  
30 V to 45 V  
VR  
TJ 200 °C for use in solar cell box as a bypass diode for  
protection, using DC forward current without reverse bias.  
MAJOR RATINGS AND CHARACTERISTICS  
SYMBOL  
IF(AV)  
VRRM  
IFSM  
CHARACTERISTICS  
VALUES  
15  
UNITS  
DC  
A
V
30 to 45  
2150  
tp = 5 μs sine  
15 Apk, TJ = 125 °C  
Range (1)  
A
VF  
0.48  
V
TJ  
- 55 to 150  
°C  
Note  
(1)  
TJ 200 °C for DC current without reverse voltage  
VOLTAGE RATINGS  
PARAMETER  
SYMBOL  
VR  
VS-150SQ030 VS-150SQ035 VS-150SQ040 VS-150SQ045  
UNITS  
Maximum DC reverse voltage  
Maximum working peak reverse voltage  
30  
35  
40  
45  
V
VRWM  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
VALUES  
UNITS  
Maximum average forward current  
See fig. 5  
IF(AV)  
For DC solar application TC = 172 °C (TJ = 200 °C)  
15  
A
Maximum peak one cycle  
non-repetitive surge current  
See fig. 7  
Followinganyratedload  
condition and with rated  
RRM applied  
5 μs sine or 3 μs rect. pulse  
2150  
IFSM  
10 ms sine or 6 ms rect. pulse  
340  
12  
V
Non-repetitive avalanche energy  
Repetitive avalanche current  
EAS  
IAR  
TJ = 25 °C, IAS = 1.8 A, L = 7.4 mH  
mJ  
A
Current decaying linearly to zero in 1 μs  
Frequency limited by, TJ maximum VA = 1.5 x VR typical  
1.8  
Document Number: 93098  
Revision: 15-Jun-10  
For technical questions within your region, please contact one of the following:  
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
www.vishay.com  
1
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