14KESD5.0A

更新时间： 2024-11-22 22:29:11

品牌	Logo	应用领域
美高森美 - MICROSEMI		瞬态抑制器二极管电视局域网
页数	文件大小	规格书
4页	189K
描述
AXIAL-LEAD TVS

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中文翻译

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技术参数
数据手册

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14KESD5.0A 技术参数

是否Rohs认证：	不符合	生命周期：	Active
零件包装代码：	DO-41	包装说明：	O-LALF-W2
针数：	2	Reach Compliance Code：	compliant
ECCN代码：	EAR99	HTS代码：	8541.10.00.50
风险等级：	5.7	Is Samacsys：	N
最小击穿电压：	6.4 V	外壳连接：	ISOLATED
最大钳位电压：	16.8 V	配置：	SINGLE
二极管元件材料：	SILICON	二极管类型：	TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95代码：	DO-204AL	JESD-30 代码：	O-LALF-W2
JESD-609代码：	e0	最大非重复峰值反向功率耗散：	4000 W
元件数量：	1	端子数量：	2
最高工作温度：	200 °C	最低工作温度：	-65 °C
封装主体材料：	GLASS	封装形状：	ROUND
封装形式：	LONG FORM	峰值回流温度（摄氏度）：	NOT SPECIFIED
极性：	UNIDIRECTIONAL	最大功率耗散：	1.5 W
认证状态：	Not Qualified	最大重复峰值反向电压：	5 V
最大反向电流：	600 µA	表面贴装：	NO
技术：	AVALANCHE	端子面层：	TIN LEAD
端子形式：	WIRE	端子位置：	AXIAL
处于峰值回流温度下的最长时间：	NOT SPECIFIED	Base Number Matches：	1

14KESD5.0A 数据手册

14KESD5.0 thru 14KESD170CA

AXIAL-LEAD TVS

S C O T T S D A L E D I V I S I O N

DESCRIPTION

APPEARANCE

These small axial-leaded TVS devices feature the ability to clamp

dangerous high voltage, short-term transients such as produced by directed

or radiated electrostatic discharge phenomena before entering sensitive

component regions of a circuit design. They are small economical transient

voltage suppressors targeted primarily for short-term transients below a few

microseconds while still achieving significant peak-pulse-power capability

as illustrated in Figure #1.

DO-41

(DO-204AL)

IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com

FEATURES

APPLICATIONS / BENEFITS

•

Excellent protection in clamping direct ESD level

transients in excess of 40,000 V per MIL-STD-750,

Method 1020 (approx. 150 ns exponential wave)

Absorbs ESD level transients* of 14,000 Watts per

MIL-STD-750, Method 1020 (approximately 150 ns

exponential wave, or one microsecond transients

up to 4000 watts. See Figure #1 and #2 for overall

transient Peak Pulse Power.

•

Protects Sensitive circuits from short duration fast

rise time transients such as Electrostatic Discharge

(ESD) or Electrical Fast Transients (EFT)

Minimal capacitance (See Figure #3)

Flexible axial-lead mounting terminals

•

Bidirectional features available by adding a “C” or

“CA” suffix

•

Clamps Transients in less than 100 picoseconds

Working Stand-off Voltage range of 5V to 170V

Hermetic DO-41 Package. Also available in surface

mount DO-213AB MELF package (see separate

data sheet)

MAXIMUM RATINGS

MECHANICAL AND PACKAGING

•

4000 Watts for One Microsecond Square Wave or

14,000 watts per ESD Wave form of MIL-STD-750,

method 1020.

•

CASE: Hermetically sealed axial-lead glass DO-41

(DO-204AL) package

TERMINALS: Leads, tin-lead plated solderable per

MIL-STD-750, method 2026

POLARITY: Banded end is cathode

WEIGHT: 0.378 grams (typical)

MARKING: Part number

•

See Surge Rating curve in Figures #1 and 2.

Operating and storage temperature –65^oC to 175^oC

•

THERMAL RESISTANCE: Less than 83^oC/Watt

junction to lead at 0.375 inches from body.

•

DC power dissipation 1500 mW at T_L= 75^oC at 3/8

inch (10 mm) lead length from body.

TAPE & REEL option: Standard per EIA-296 (add

“TR” suffix to part number)

Derate at 22.8 W/^oC above 25^oC for P_PP(1µs) and

•

See package dimension on last page

at 15 mW/^oC above 75^oC for dc power.

Forward Surge Current 500 amps for 1µs at T_L=

25^oC (rise time > 100 ns).

Microsemi

Page 1

10-03-2003 REV A

Scottsdale Division

8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503

12 3 4

中文翻译

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与14KESD5.0A相关器件

型号	品牌	获取价格	描述	数据表
14KESD5.0AE3	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 4000W, 5V V(RWM), Unidirectional, 1 Element, Silicon, DO-2
14KESD5.0AE3TR	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 4000W, 5V V(RWM), Unidirectional, 1 Element, Silicon, DO-2
14KESD5.0ATRE3	MICROSEMI	获取价格	Transient Suppressor,
14KESD5.0CAE3	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 4000W, 5V V(RWM), Bidirectional, 1 Element, Silicon, DO-20
14KESD5.0CATR	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 4000W, 5V V(RWM), Bidirectional, 1 Element, Silicon, DO-20
14KESD5.0CATRE3	MICROSEMI	获取价格	Transient Suppressor,
14KESD5.0CE3	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 4000W, 5V V(RWM), Bidirectional, 1 Element, Silicon, DO-20
14KESD5.0CE3TR	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 4000W, 5V V(RWM), Bidirectional, 1 Element, Silicon, DO-20
14KESD5.0CTR	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 4000W, 5V V(RWM), Bidirectional, 1 Element, Silicon, DO-20
14KESD5.0CTRE3	MICROSEMI	获取价格	Transient Suppressor,

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