Datasheet > 12FT10H-T

12FT10H-T

更新时间： 2024-11-25 11:46:19

品牌	Logo	应用领域
尼尔 - NELLSEMI		/
页数	文件大小	规格书
7页	1115K
描述
Sensitive and Standard SCRs, 12A

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数据手册

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12FT10H-T 数据手册

RoHS

12PT Series _RoHS

SEMICONDUCTOR

Sensitive and Standard SCRs, 12A

Main Features

Symbol

Value

Unit

I_T(RMS)

V_DRM/V_RRM

I_GT

600 to 1000

0.2 to 15

TO-251 (I-PAK)

TO-252 (D-PAK)

(12PTxxF)

(12PTxxG)

DESCRIPTION

Available either in sensitive or standard gate

triggering levels, the 12A SCR series is suitable

to fit all modes of control found in applications

such as overvoltage crowbar protection, motor

control circuits in power tools and kitchen aids,

inrush current limiting circuits, capacitive

discharge ignition and voltage regulation circuits.

TO-220AB (Non-lnsulated)

TO-220AB (lnsulated)

(12PTxxAI)

(12PTxxA)

Available in through-hole or surface-mount

packages, they provide an optimized performance

in a limited space.

(A2)

TO-263 (D²PAK)

(G)3

1(A1)

(12PTxxH)

ABSOLUTE MAXIMUM RATINGS

SYMBOL

TEST CONDITIONS

VALUE

UNIT

PARAMETER

TO-251/TO-252/TO-220AB/TO-263 Tc=105°C

RMS on-state current full sine wave

(180° conduction angle )

I_T(RMS)

Tc=90°C

Tc=105°C

Tc=90°C

TO-220AB insulated

TO-251/TO-252/TO-220AB/TO-263

Average on-state current

(180° conduction angle)

I_T(AV)

TO-220AB insulated

t = 20 ms

t = 16.7 ms

F =50 Hz

F =60 Hz

t_p= 10 ms

140

145

Non repetitive surge peak on-state

I_TSM

I²t

current (full cycle, T initial = 25°C)

I²t Value for fusing

A²s

A/µs

Critical rate of rise of on-state current

I_G= 2xl_GT, t_r≤100ns

dI/dt

I_GM

F = 60 Hz

T_j= 125ºC

Peak gate current

T_p= 20 µs

P_G(AV)

T_stg

T_j

Average gate power dissipation

Storage temperature range

T_j=125ºC

- 40 to + 150

ºC

Operating junction temperature range

- 40 to + 125

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