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12065A200CAT2A PDF预览

12065A200CAT2A

更新时间: 2024-11-26 01:08:03
品牌 Logo 应用领域
恩智浦 - NXP /
页数 文件大小 规格书
12页 468K
描述
Indium Gallium Phosphorus HBT

12065A200CAT2A 数据手册

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Document Number: MMG2401  
Rev. 3, 5/2006  
Freescale Semiconductor  
Technical Data  
Indium Gallium Phosphorus HBT  
WLAN Power Amplifier  
Designed for 802.11g and dual mode applications with frequencies from  
2400 to 2500 MHz.  
MMG2401NR2  
26.5 dBm P1dB @ 2450 MHz  
Power Gain: 27.5 dB Typ (@ f = 2450 MHz, Class AB)  
High Gain, High Efficiency and High Linearity  
EVM = 3% Typ @ Pout = +19 dBM, 14% PAE  
RoHS Compliant  
2400--2500 MHz, 27.5 dB, 26.5 dBm  
802.11g WLAN POWER AMPLIFIER  
InGaP HBT  
In Tape and Reel. R2 Suffix = 1,500 Units per 12 mm, 7 inch Reel.  
CASE 1483--01  
QFN 3x3  
Table 1. Maximum Ratings  
Rating  
Symbol  
Value  
Unit  
V
Collector Supply  
V
5
5
CC  
Base Supply First Stage  
Base Supply Second Stage  
Detector Bias Supply  
DC Current  
V
V
V
B1  
B2  
5
V
V
5
V
BIAS  
I
171  
mA  
DC  
Table 2. Thermal Characteristics  
Characteristic  
Thermal Resistance, Junction to Case  
Symbol  
Value  
Unit  
°C/W  
°C  
(1)  
R
θ
185  
JC  
Case Operating Temperature Range  
Storage Temperature Range  
T
C
-- 4 0 t o + 8 5  
T
stg  
-- 55 to +150  
°C  
Table 3. ESD Protection Characteristics  
Test Methodology  
Class  
Human Body Model (per JESD22--A114)  
Machine Model (per EIA/JESD22--A115)  
Charge Device Model (per JESD22--C101)  
2 (Minimum)  
A (Minimum)  
II (Minimum)  
Table 4. Moisture Sensitivity Level  
Test Methodology  
Rating  
Package Peak Temperature  
Unit  
Per JESD 22--A113, IPC/JEDEC J--STD--020  
1. Simulated.  
1
260  
°C  
© Freescale Semiconductor, Inc., 2006, 2008. All rights reserved.  

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