Datasheet > 11N50G-TF3-T

11N50G-TF3-T

更新时间： 2022-09-11 00:05:37

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友顺 - UTC		/
页数	文件大小	规格书
6页	180K
描述
11A, 500V N-CHANNEL POWER MOSFET

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数据手册

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11N50G-TF3-T 数据手册

11N50

Preliminary

Power MOSFET

ABSOLUTE MAXIMUM RATINGS (T_C= 25°C, unless otherwise specified)

PARAMETER

SYMBOL

V_DSS

RATINGS

500

UNIT

Drain to Source Voltage

Gate to Source Voltage

V_GSS

±30

T_C=25°C

11 (Note 2)

7 (Note 2)

44 (Note 2)

670

Continuous Drain Current

I_D

T_C=100°C

Pulsed Drain Current (Note 3)

I_DM

E_AS

Single Pulsed Avalanche Energy(Note 4)

Peak Diode Recovery dv/dt (Note 5)

TO-220

V/ns

dv/dt

4.5

195

T_C=25°C

TO-220F1

TO-220F

TO-220

147

Power Dissipation

P_D

1.56

Derate above

25°C

TO-220F1

TO-220F

0.39

W/°C

1.18

Junction Temperature

Storage Temperature

T_J

+150

°C

T_STG

-55 ~ +150

Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. Drain current limited by maximum junction temperature

3. Repetitive Rating : Pulse width limited by maximum junction temperature

4. L=10mH, I_AS=11A, V_DD= 50V, R_G=25Ω, Starting T_J=25°C

5. I_SD≤11A, di/dt ≤200A/μs, V_DD≤BV_DSS, Starting T_J=25°C

THERMAL DATA

PARAMETER

SYMBOL

RATINGS

62.5

UNIT

°C/W

Junction to Ambient

θ_JA

TO-220

0.64

Junction to Case

TO-220F1

TO-220F

θ_JC

2.58

°C/W

0.85

UNISONIC TECHNOLOGIES CO., LTD

2 of 6

QW-R502-462.c

www.unisonic.com.tw

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