11DQ05TRPBF

更新时间： 2024-02-17 06:58:32

品牌	Logo	应用领域
威世 - VISHAY		整流二极管瞄准线功效
页数	文件大小	规格书
5页	82K
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11DQ05TRPBF 数据手册

11DQ05, 11DQ06

Schottky Rectifier, 1.1 A

Vishay High Power Products

ELECTRICAL SPECIFICATIONS

PARAMETER

SYMBOL

TEST CONDITIONS

VALUES

0.58

0.76

0.53

0.64

1.0

UNITS

1 A

T_J= 25 °C

2 A

Maximum forward voltage drop

See fig. 1

(1)

V_FM

1 A

T_J= 125 °C

2 A

T_J= 25 °C

Maximum reverse leakage current

See fig. 2

(1)

I_RM

_R= Rated V_R

T_J= 125 °C

Typical junction capacitance

Typical series inductance

C_T

L_S

V_R= 5 V_DC(test signal range 100 kHz to 1 MHz) 25 °C

Measured lead to lead 5 mm from package body

Rated V_R

8.0

Maximum voltage rate of change

dV/dt

10 000

V/µs

Note

(1)

Pulse width < 300 µs, duty cycle < 2 %

THERMAL - MECHANICAL SPECIFICATIONS

PARAMETER

SYMBOL

TEST CONDITIONS

VALUES

UNITS

Maximum junction and storage

temperature range

T_J⁽¹⁾, T_Stg

- 40 to 150

°C

Maximum thermal resistance,

junction to ambient

DC operation

Without cooling fin

R_thJA

R_thJL

100

°C/W

Typical thermal resistance,

junction to lead

DC operation

See fig. 4

0.33

Approximate weight

Marking device

0.012

oz.

11DQ05

11DQ06

Case style DO-204AL (DO-41)

Note

dP_tot

(1)

------------- < -------------- thermal runaway condition for a diode on its own heatsink

dT_JR_thJA

www.vishay.com

For technical questions, contact: diodes-tech@vishay.com

Document Number: 93206

Revision: 06-Nov-08

123 4 5

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