Datasheet > 11DQ05TR-M3

11DQ05TR-M3

更新时间： 2022-09-11 00:02:02

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
6页	120K
描述
Schottky Rectifier, 1.1 A

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数据手册

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11DQ05TR-M3 数据手册

VS-11DQ05, VS-11DQ05-M3, VS-11DQ06, VS-11DQ06-M3

www.vishay.com

Vishay Semiconductors

160

140

120

100

T = 150 °C

T = 125 °C

T = 25 °C

Square wave (D = 0.50)

80 % Rated V_Rapplied

see note (1)

0.1

0.2 0.4 0.6 0.8

1.2 1.4 1.6

0.2

0.4

0.6

0.8

1.2

I_F(AV)- Average Forward Current (A)

Fig. 4 - Maximum Ambient Temperature vs.

Average Forward Current, Printed Circuit Board Mounted

93206_04

V_FM- Forward Voltage Drop (V)

93206_01

Fig. 1 - Maximum Forward Voltage Drop Characteristics

100

0.8

D = 0.20

D = 0.25

D = 0.33

D = 0.50

T_J= 150° C

0.6

D = 0.75

T_J= 125° C

0.4

0.2

RMS Limit

0.1

0.01

0.001

0.0001

T_J= 25° C

0.2 0.4 0.6 0.8

1.2 1.4 1.6

Average Forward Current - I_F(AV)(A)

Fig. 5 - Forward Power Loss Characteristics

93206_05

93206_02

V_R- Reverse Voltage (V)

Fig. 2 - - Typical Values of Reverse Current vs.

Reverse Voltage

100

1000

At Any Rated Load Condition

And With rated V_RRMApplied

Following Surge

T_J= 25 °C

100

T_J= 25 °C

100

1000

10 000

93206_06

t_p- Square Wave Pulse Duration (µs)

93206_03

V_R- Reverse Voltage (V)

Fig. 3 - - Typical Junction Capacitance vs.

Reverse Voltage

Fig. 6 - Maximum Non-Repetitive Surge Current

Note

⁽¹⁾Formula used: T_C= T_J- (Pd + Pd_REV) x R_thJC

Pd = Forward power loss = I_F(AV)x V_FMat (I_F(AV)/D) (see fig. 6); Pd_REV= Inverse power loss = V_R1x I_R(1 - D); I_Rat V_R1= 80 % rated V_R

;

Revision: 21-Sep-11

Document Number: 93206

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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