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11DQ03 PDF预览

11DQ03

更新时间: 2024-01-03 05:08:52
品牌 Logo 应用领域
威世 - VISHAY 整流二极管瞄准线功效
页数 文件大小 规格书
5页 79K
描述
Schottky Rectifier, 1.1 A

11DQ03 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:DO-41
包装说明:O-PALF-W2针数:2
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.52
其他特性:HIGH RELIABILITY, FREE WHEELING DIODE应用:GENERAL PURPOSE
外壳连接:ISOLATED配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
JEDEC-95代码:DO-204ALJESD-30 代码:O-PALF-W2
最大非重复峰值正向电流:225 A元件数量:1
相数:1端子数量:2
最高工作温度:150 °C最低工作温度:-40 °C
最大输出电流:1.1 A封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:LONG FORM
峰值回流温度(摄氏度):NOT SPECIFIED认证状态:Not Qualified
最大重复峰值反向电压:30 V表面贴装:NO
技术:SCHOTTKY端子形式:WIRE
端子位置:AXIAL处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

11DQ03 数据手册

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11DQ03, 11DQ04  
Vishay High Power Products  
Schottky Rectifier, 1.1 A  
FEATURES  
• Low profile, axial leaded outline  
• High frequency operation  
• Very low forward voltage drop  
• High purity, high temperature epoxy encapsulation for  
enhanced mechanical strength and moisture resistance  
Cathode  
Anode  
• Guard ring for enhanced ruggedness and long term  
reliability  
DO-204AL  
• Lead (Pb)-free plating  
• Designed and qualified for industrial level  
DESCRIPTION  
PRODUCT SUMMARY  
The 11DQ.. axial leaded Schottky rectifier has been  
optimized for very low forward voltage drop, with moderate  
leakage. Typical applications are in switching power  
supplies, converters, freewheeling diodes, and reverse  
battery protection.  
IF(AV)  
1.1 A  
30/40 V  
VR  
MAJOR RATINGS AND CHARACTERISTICS  
SYMBOL  
IF(AV)  
VRRM  
IFSM  
CHARACTERISTICS  
VALUES  
1.1  
UNITS  
Rectangular waveform  
A
V
30/40  
tp = 5 µs sine  
1 Apk, TJ = 25 °C  
Range  
225  
A
VF  
0.55  
V
TJ  
- 40 to 150  
°C  
VOLTAGE RATINGS  
PARAMETER  
SYMBOL  
VR  
11DQ03  
11DQ04  
40  
UNITS  
Maximum DC reverse voltage  
30  
V
Maximum working peak reverse voltage  
VRWM  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
VALUES  
UNITS  
Maximum average forward current  
See fig. 4  
IF(AV)  
50 % duty cycle at TC = 75 °C, rectangular waveform  
1.1  
A
Maximum peak one cycle  
non-repetitive surge current  
See fig. 6  
Following any rated load  
condition and with rated  
5 µs sine or 3 µs rect. pulse  
225  
IFSM  
10 ms sine or 6 ms rect. pulse  
TJ = 25 °C, IAS = 1.0 A, L = 6 mH  
35  
V
RRM applied  
Non-repetitive avalanche energy  
Repetitive avalanche current  
EAS  
IAR  
3.0  
mJ  
A
Current decaying linearly to zero in 1 µs  
Frequency limited by TJ maximum VA = 1.5 x VR typical  
1.0  
Document Number: 93205  
Revision: 06-Nov-08  
For technical questions, contact: diodes-tech@vishay.com  
www.vishay.com  
1

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