Datasheet > 110RKI100S90PBF

110RKI100S90PBF

更新时间： 2023-07-15 00:00:00

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
7页	63K
描述
Silicon Controlled Rectifier, 172A I(T)RMS, 1200V V(DRM), 1200V V(RRM), 1 Element, TO-208AD

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110RKI100S90PBF 数据手册

111RKI Series

Bulletin I25152 rev. C 05/97

ELECTRICAL SPECIFICATIONS

Voltage Ratings

Voltage

Code

V_DRM/V_RRM, max. repetitive

V_RSM, maximum non-

I_DRM/I_RRMmax.

Type number

111RKI

peak and off-state voltage

repetitive peak voltage

@ T_J= T_Jmax.

400

500

800

900

120

1200

1300

On-state Conduction

Parameter

111RKI

Units Conditions

I_T(AV)Max. average on-state current

@ Case temperature

110

180° conduction, half sine wave

°C

I_T(RMS)Max. RMS on-state current

172

2080

2180

1750

1830

21.7

19.8

15.3

14.0

217

DC @ 83°C case temperature

t = 10ms No voltage

t = 8.3ms reapplied

I_TSM

Max. peak, one-cycle

non-repetitive surge current

t = 10ms 100% V_RRM

t = 8.3ms reapplied

t = 10ms No voltage

t = 8.3ms reapplied

t = 10ms 100% V_RRM

t = 8.3ms reapplied

Sinusoidal half wave,

Initial T_J= T_Jmax.

I²t

Maximum I²t for fusing

KA²s

I²√t

Maximum I²√t for fusing

KA²√s t = 0.1 to 10ms, no voltage reapplied

V_T(TO)1Low level value of threshold

0.82

1.02

(16.7% x π x I_T(AV)< I < π x I_T(AV)), T_J= T_Jmax.

voltage

V_T(TO)2High level value of threshold

voltage

(I > π x I_T(AV)),T_J= T_Jmax.

r_t1

Low level value of on-state

slope resistance

2.16

1.70

(16.7% x π x I_T(AV)< I < π x I_T(AV)), T_J= T_Jmax.

mΩ

r_t2

High level value of on-state

slope resistance

(I > π x I_T(AV)),T_J= T_Jmax.

V_TM

I_H

Max. on-state voltage

Maximum holding current

Typical latching current

1.57

200

400

I = 350A, T_J= T_Jmax., t = 10ms sine pulse

pk p

T_J= 25°C, anode supply 6V resistive load

I_L

Switching

Parameter

111RKI

300

Units Conditions

di/dt Max. non-repetitive rate of rise

of turned-on current

Gate drive 20V, 20Ω, t ≤ 1µs

A/µs

T_J= T_Jmax, anode voltage≤ 80% V_DRM

Gate current 1A, di /dt = 1A/µs

Typical delay time

= 0.67% V_DRM, T_J= 25°C

µs

_TM= 50A, T_J= T_Jmax., di/dt = -5A/µs, V_R= 50V

Typical turn-off time

110

dv/dt = 20V/µs, Gate 0V 25Ω

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