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10N80L-TF1-T PDF预览

10N80L-TF1-T

更新时间: 2024-12-01 07:15:27
品牌 Logo 应用领域
友顺 - UTC 晶体晶体管功率场效应晶体管开关脉冲局域网
页数 文件大小 规格书
6页 194K
描述
10A, 800V N-CHANNEL POWER MOSFET

10N80L-TF1-T 技术参数

是否Rohs认证: 符合生命周期:Active
零件包装代码:TO-220AB包装说明:FLANGE MOUNT, R-PSFM-T3
针数:3Reach Compliance Code:compliant
风险等级:5.12Is Samacsys:N
雪崩能效等级(Eas):920 mJ外壳连接:ISOLATED
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:800 V
最大漏极电流 (Abs) (ID):10 A最大漏极电流 (ID):10 A
最大漏源导通电阻:1.1 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-220ABJESD-30 代码:R-PSFM-T3
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):63 W
最大脉冲漏极电流 (IDM):40 A认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

10N80L-TF1-T 数据手册

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UNISONIC TECHNOLOGIES CO., LTD  
10N80  
Power MOSFET  
10A, 800V N-CHANNEL  
POWER MOSFET  
„
DESCRIPTION  
The UTC 10N80 uses UTC’s advanced proprietary, planar  
stripe, DMOS technology to provide excellent RDS(ON), low gate  
charge and operation with low gate voltages. This device is  
suitable for use as a load switch or in PWM applications.  
„
FEATURES  
* RDS(ON) = 1.1@VGS = 10 V  
* Ultra Low Gate Charge ( Typical 45nC )  
* Low Reverse Transfer Capacitance ( CRSS = Typical 15pF )  
* Fast Switching Capability  
* Avalanche Energy Specified  
* Improved dv/dt Capability, High Ruggedness  
„
SYMBOL  
2.Drain  
1.Gate  
3.Source  
„ ORDERING INFORMATION  
Ordering Number  
Pin Assignment  
Package  
Packing  
Lead Free  
Halogen Free  
1
2
D
D
D
3
S
S
S
10N80L-T3P-T  
10N80L-TF1-T  
10N80L-TF2-T  
10N80G-T3P-T  
10N80G-TF1-T  
10N80G-TF2-T  
TO-3P  
Tube  
Tube  
Tube  
G
G
G
TO-220F1  
TO-220F2  
www.unisonic.com.tw  
1 of 6  
Copyright © 2012 Unisonic Technologies Co., Ltd  
QW-R502-218.F  

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