10A CELL SERIES
硅整流器 Silicon Rectifier
■特征 Features
■外形尺寸和印记 Outline Dimensions and Mark
●
Io 10A
VRRM
10A CELL
●
100V~1000V
●
●
电极表面高可焊性
Silicone Rubber
Bottom Electrode
.087(2.2)
.071(1.8)
Solderable electrode surface
耐正向浪涌电流能力高
High surge forward current capability
■用途 Applications
作一般单相整流用
●
General purpose 1 phase
rectifier applications
Upper Electrode
.224(5.7)
.217(5.5)
Dimensions in inches and (millimeters)
■极限值(绝对最大额定值)
Limiting Values(Absolute Maximum Rating)
10A
符号
Symbol Unit
单位
参数名称
Item
条件
Conditions
100V200V400V600V800V1000V
反向重复峰值电压
Repetitive Peak Reverse Voltage
平均整流输出电流
Average Rectified Output
Current
VRRM
IO
V
A
100 200 400 600 800 1000
60H 正弦波,电阻负载,T =50℃
z
a
10
60H sine wave, R- load, T =50℃
z
a
正向(不重复)浪涌电流
Surge(Non-repetitive)Forward
Current
60H 正弦波,一个周期,T =25℃
z
a
IFSM
A
300
375
60H sine wave, 1 cycle, T =25℃
z
a
1ms≤t<8.3ms T =25℃,单个二
j
正向浪涌电流的平方对电流浪
涌持续
时间的积分值
2
2
极管
I t
A s
1ms≤t<8.3ms T =25℃,Rating of
j
Current Squared Time
per diode
存储温度
TSTG
TJ
-55 ~+150
-55 ~+125
℃
℃
Storage Temperature
结温
Junction Temperature
■电特性 (T =25℃ 除非另有规定)
a
Electrical Characteristics(Ta=25℃ Unless otherwise specified)
参数名称
Item
符号 单位
Symbol Unit
测试条件
Test Condition
最大值
Max
正向峰值电压
Peak Forward Voltage
反向峰值电流
I
FM=10A,脉冲测试,单个二极管的额定值
VFM
V
1.1
IFM
=10A, Pulse measurement, Rating of per diode
T =25℃
a
IRRM1
IRRM2
5
VRM=VRRM
μA
Peak Reverse Current
T =125℃
a
500
结和环境之间
Between junction and ambient
热阻
7.5
Rθ
℃/W
J-A
Thermal Resistance
扬州扬杰电子科技股份有限公司
Yangzhou Yangjie Electronic Technology Co., Ltd.
Document Number 0080
Rev. 1.0, 22-Sep-11
www.21yangjie.com