VS-100BGQ030
Vishay Semiconductors
www.vishay.com
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
TYP.
0.47
0.56
0.36
0.49
80
MAX.
0.5
UNITS
50 A
TJ = 25 °C
100 A
50 A
0.63
0.4
(1)
Forward voltage drop
VFM
V
TJ = 150 °C
100 A
0.56
160
1100
2.4
TJ = 125 °C, VR = 15 V
TJ = 150 °C, VR = 30 V
TJ = 25 °C
800
0.6
(1)
Reverse leakage current
IRM
mA
VR = Rated VR
TJ = 125 °C
260
460
Maximum junction capacitance
Typical series inductance
CT
LS
VR = 5 VDC, (test signal range 100 kHz to 1 MHz) 25 °C
Measured from tab to mounting plane
Rated VR
3800
3.5
pF
nH
Maximum voltage rate of change
dV/dt
10 000
V/μs
Note
(1)
Pulse width < 300 μs, duty cycle < 2 %
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Maximum junction and storage
temperature range
TJ, TStg
- 55 to 150
°C
Maximum thermal resistance,
junction to case
RthJC
RthCS
DC operation
Mounting surface, smooth and greased
0.50
0.30
°C/W
Typical thermal resistance,
case to heatsink
5
g
Approximate weight
0.18
oz.
minimum
maximum
1.2 (10)
2.4 (20)
N · m
Mounting torque
Marking device
(lbf · in)
Case style PowerTab®
100BGQ030
Revision: 17-Jun-11
Document Number: 94579
2
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