VS-100BGQ045
Vishay Semiconductors
www.vishay.com
Schottky Rectifier, 100 A
FEATURES
• 150 °C max. operating junction temperature
• High frequency operation
• Ultralow forward voltage drop
• Continuous high current operation
Cathode
Anode
• Guard ring for enhanced ruggedness and long
term reliability
PowerTab®
• Screw mounting only
• Designed and qualified according to JEDEC-JESD47
• PowerTab® package
PRODUCT SUMMARY
• Compliant to RoHS Directive 2002/95/EC
Package
PowerTab®
IF(AV)
100 A
45 V
DESCRIPTION
The VS-100BGQ045 Schottky rectifier has been optimized
for ultralow forward voltage drop specifically for low voltage
output in high current AC/DC power supplies.
The proprietary barrier technology allows for reliable
operation up to 150 °C junction temperature. Typical
applications are in switching power supplies, converters,
reverse battery protection, and redundant power
subsystems.
VR
VF at IF
IRM
0.71 V
320 mA at 125 °C
150 °C
TJ max.
Diode variation
EAS
Single die
40 mJ
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
VALUES
100
UNITS
Rectangular waveform
A
°C
V
IF(AV)
TC
97
VRRM
IFSM
45
tp = 5 μs sine
100 Apk (typical)
TJ
4400
0.65
A
V
VF
TJ
150
°C
°C
Range
- 55 to 150
VOLTAGE RATINGS
PARAMETER
SYMBOL
VR
100BGQ045
UNITS
Maximum DC reverse voltage
45
V
Maximum working peak reverse voltage
VRWM
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Maximum average forward current
IF(AV)
50 % duty cycle at TC = 97 °C, rectangular waveform
100
A
Following any rated load
condition and with rated
5 μs sine or 3 μs rect. pulse
4400
Maximum peak one cycle
non-repetitive surge current
IFSM
A
10 ms sine or 6 ms rect. pulse
TJ = 25 °C, IAS = 6 A, L = 2 mH
830
40
VRRM applied
Non-repetitive avalanche energy
Repetitive avalanche current
EAS
IAR
mJ
A
Current decaying linearly to zero in 1 μs
Frequency limited by TJ maximum VA = 1.5 x VR typical
6
Revision: 17-Jun-11
Document Number: 94580
1
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