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100BGQ045_11

更新时间: 2022-09-10 17:15:58
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
7页 134K
描述
Schottky Rectifier, 100 A

100BGQ045_11 数据手册

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VS-100BGQ045  
Vishay Semiconductors  
www.vishay.com  
Schottky Rectifier, 100 A  
FEATURES  
• 150 °C max. operating junction temperature  
• High frequency operation  
• Ultralow forward voltage drop  
• Continuous high current operation  
Cathode  
Anode  
• Guard ring for enhanced ruggedness and long  
term reliability  
PowerTab®  
• Screw mounting only  
• Designed and qualified according to JEDEC-JESD47  
• PowerTab® package  
PRODUCT SUMMARY  
• Compliant to RoHS Directive 2002/95/EC  
Package  
PowerTab®  
IF(AV)  
100 A  
45 V  
DESCRIPTION  
The VS-100BGQ045 Schottky rectifier has been optimized  
for ultralow forward voltage drop specifically for low voltage  
output in high current AC/DC power supplies.  
The proprietary barrier technology allows for reliable  
operation up to 150 °C junction temperature. Typical  
applications are in switching power supplies, converters,  
reverse battery protection, and redundant power  
subsystems.  
VR  
VF at IF  
IRM  
0.71 V  
320 mA at 125 °C  
150 °C  
TJ max.  
Diode variation  
EAS  
Single die  
40 mJ  
MAJOR RATINGS AND CHARACTERISTICS  
SYMBOL  
CHARACTERISTICS  
VALUES  
100  
UNITS  
Rectangular waveform  
A
°C  
V
IF(AV)  
TC  
97  
VRRM  
IFSM  
45  
tp = 5 μs sine  
100 Apk (typical)  
TJ  
4400  
0.65  
A
V
VF  
TJ  
150  
°C  
°C  
Range  
- 55 to 150  
VOLTAGE RATINGS  
PARAMETER  
SYMBOL  
VR  
100BGQ045  
UNITS  
Maximum DC reverse voltage  
45  
V
Maximum working peak reverse voltage  
VRWM  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
VALUES  
UNITS  
Maximum average forward current  
IF(AV)  
50 % duty cycle at TC = 97 °C, rectangular waveform  
100  
A
Following any rated load  
condition and with rated  
5 μs sine or 3 μs rect. pulse  
4400  
Maximum peak one cycle  
non-repetitive surge current  
IFSM  
A
10 ms sine or 6 ms rect. pulse  
TJ = 25 °C, IAS = 6 A, L = 2 mH  
830  
40  
VRRM applied  
Non-repetitive avalanche energy  
Repetitive avalanche current  
EAS  
IAR  
mJ  
A
Current decaying linearly to zero in 1 μs  
Frequency limited by TJ maximum VA = 1.5 x VR typical  
6
Revision: 17-Jun-11  
Document Number: 94580  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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